STMicroelectronics_STH3N150-2

STMicroelectronics
STH3N150-2  
Single FETs, MOSFETs

STMicroelectronics
STH3N150-2
278-STH3N150-2
Ersa
STMicroelectronics-STH3N150-2-datasheets-7329040.pdf
MOSFET N-CH 1500V 2.5A H2PAK
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    STH3N150-2 Description

    STMicroelectronics' STH3N150-2 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is designed for use in a variety of power electronics applications. Here is a description of the model, its features, and potential applications:

    Description:

    The STH3N150-2 is an N-channel MOSFET with a drain-source voltage (VDS) of 1500V and a continuous drain current (ID) of 2A. It is available in a TO-220AC package, which is suitable for use in a wide range of power electronics applications.

    Features:

    1. High blocking voltage: The STH3N150-2 can handle high voltages up to 1500V, making it suitable for use in high-voltage power electronics applications.
    2. Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps to minimize power dissipation and improve efficiency.
    3. High switching speed: The MOSFET has a fast switching speed, which makes it suitable for use in high-frequency applications.
    4. Built-in protection: The device features built-in protection against over-voltage, over-current, and over-temperature conditions, which can help to improve the reliability and safety of power electronics systems.
    5. Robust design: The TO-220AC package is designed to be robust and durable, making it suitable for use in harsh environments.

    Applications:

    The STH3N150-2 is suitable for use in a wide range of power electronics applications, including:

    1. Motor control: The MOSFET can be used in motor control applications, such as in electric vehicles, industrial motor drives, and robotics.
    2. Power supplies: The device can be used in power supply applications, such as in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    3. Renewable energy systems: The MOSFET can be used in renewable energy systems, such as in solar panel inverters and wind turbine converters.
    4. Battery management systems: The device can be used in battery management systems, such as in electric vehicles and energy storage systems.
    5. Industrial control systems: The STH3N150-2 can be used in industrial control systems, such as in programmable logic controllers (PLCs) and variable frequency drives (VFDs).

    In summary, the STH3N150-2 is a high-power MOSFET that offers high blocking voltage, low on-state resistance, and fast switching speed. Its robust design and built-in protection features make it suitable for use in a wide range of power electronics applications, including motor control, power supplies, renewable energy systems, battery management systems, and industrial control systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Operating Junction Temperature (°C)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STH3N150-2 Documents

    Download datasheets and manufacturer documentation for STH3N150-2

    Ersa STx3N150      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
    Ersa STx3N150      

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