STMicroelectronics_STP46NF30

STMicroelectronics
STP46NF30  
Single FETs, MOSFETs

STMicroelectronics
STP46NF30
278-STP46NF30
Ersa
STMicroelectronics-STP46NF30-datasheets-6432558.pdf
MOSFET N CH 300V 42A TO-220
In Stock : 11776

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STP46NF30 Description

STP46NF30 Description

The STP46NF30 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed to deliver exceptional performance in various electronic applications. This N-channel MOSFET features a drain-to-source voltage (Vdss) of 300V, a continuous drain current (Id) of 42A at 25°C, and a maximum power dissipation of 300W at the case temperature (Tc). With its low on-resistance (Rds On) of 75mOhm at 17A and 10V, the STP46NF30 ensures efficient power management and reduced power loss.

STP46NF30 Features

  • Technology: MOSFET (Metal Oxide)
  • Series: STripFET™ II
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
  • Vgs (Max): ±20V
  • Operating Temperature: 175°C (TJ)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Through Hole
  • Package: Tube
  • Product Status: Active
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

STP46NF30 Applications

The STP46NF30 is ideal for applications requiring high voltage and current handling capabilities, such as:

  1. Power Supplies: Due to its high Vdss and Id ratings, the STP46NF30 is suitable for power supply designs, including switching power supplies and DC-DC converters.
  2. Industrial Control: The device's robust performance and high temperature rating make it suitable for industrial control systems, such as motor drives and inverters.
  3. Automotive Applications: The STP46NF30 can be used in automotive applications, such as electric vehicle charging systems and power management systems.
  4. Renewable Energy Systems: The device's high voltage and current ratings make it suitable for solar power inverters and wind energy systems.

Conclusion of STP46NF30

The STP46NF30 is a versatile and high-performance MOSFET from STMicroelectronics, offering a combination of high voltage, current handling capabilities, and low on-resistance. Its unique features, such as the STripFET™ II series and low gate charge, make it an excellent choice for a wide range of applications, including power supplies, industrial control, automotive, and renewable energy systems. With its active product status and compliance with REACH and RoHS regulations, the STP46NF30 is a reliable and environmentally friendly solution for demanding electronic designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Operating Junction Temperature (°C)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP46NF30 Documents

Download datasheets and manufacturer documentation for STP46NF30

Ersa Mult Devices Testing 10/May/2018      
Ersa STx46NF30      
Ersa STP46NF30 View All Specifications      
Ersa STx46NF30      

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