STMicroelectronics_STW3N170

STMicroelectronics
STW3N170  
Single FETs, MOSFETs

STMicroelectronics
STW3N170
278-STW3N170
Ersa
STMicroelectronics-STW3N170-datasheets-12193932.pdf
MOSFET N-CH 1700V 2.6A TO247-3
In Stock : 420

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 1+
    • $2.91125
    • $2.91
    • 10+
    • $2.54196
    • $25.42
    • 30+
    • $2.32171
    • $69.65
    • 100+
    • $2.09981
    • $209.98
    • 500+
    • $1.99714
    • $998.57
    ADD TO CART
    QUICK ORDER
    $2.91125    $2.91
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    STW3N170 Description

    STW3N170 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including automotive and industrial systems.

    Description:

    The STW3N170 is an N-channel enhancement mode field-effect transistor (MOSFET) that features a high voltage rating of 170V and a continuous drain current (ID) of 3.6A. It is available in a TO-220 package, which is a popular choice for power transistors due to its ability to dissipate heat effectively.

    Features:

    • High voltage rating of 170V
    • Continuous drain current (ID) of 3.6A
    • N-channel enhancement mode MOSFET
    • Low on-state resistance (RDS(on))
    • Suitable for use in a wide range of applications, including automotive and industrial systems
    • Available in a TO-220 package

    Applications:

    The STW3N170 is suitable for use in a variety of applications, including:

    • Automotive systems, such as windshield wiper motors and power window motors
    • Industrial control systems, such as motor drives and power supplies
    • Power management systems, such as battery chargers and power converters
    • Motor control applications, such as HVAC blower motor control and pump control

    Overall, the STW3N170 is a high voltage N-channel MOSFET transistor that offers a range of features and is suitable for use in a variety of applications. Its high voltage rating and continuous drain current make it a popular choice for automotive and industrial systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STW3N170 Documents

    Download datasheets and manufacturer documentation for STW3N170

    Ersa STW3N170, STWA3N170      
    Ersa Standard outer labelling 15/Nov/2023      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service