STMicroelectronics_STD18N65M5

STMicroelectronics
STD18N65M5  
Single FETs, MOSFETs

STMicroelectronics
STD18N65M5
278-STD18N65M5
Ersa
STMicroelectronics-STD18N65M5-datasheets-916563.pdf
MOSFET N-CH 650V 15A DPAK
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STD18N65M5 Description

The STD18N65M5 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including high voltage switching and power management.

Description:

The STD18N65M5 is an N-channel enhancement mode field-effect transistor (MOSFET). It is housed in a TO-220AB package, which is suitable for a wide range of applications. The device has a maximum drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 5.4A.

Features:

  • N-channel, enhancement mode
  • High voltage operation: VDS max = 650V
  • High current capability: ID max = 5.4A (Tc), 4.5A (Tj)
  • Low on-state resistance: RDS(on) max = 0.065 Ohm (VGS = 10V)
  • Logic level compatible: VGS(th) = 2.5V min
  • Avalanche energy capable: EAS = 80J (Ta = 25°C)
  • Built-in body diode with fast reverse recovery

Applications:

The STD18N65M5 is suitable for a wide range of applications, including:

  1. High voltage switching: The device's high voltage capability makes it suitable for use in high voltage switching applications, such as in power supplies and motor control circuits.
  2. Power management: The low on-state resistance and high current capability of the STD18N65M5 make it well-suited for use in power management applications, such as in battery chargers and power adapters.
  3. Motor control: The device's fast switching capabilities and built-in body diode make it suitable for use in motor control applications, such as in industrial automation and robotics.
  4. Inverters: The high voltage and current capabilities of the STD18N65M5 make it suitable for use in inverter applications, such as in solar power systems and uninterruptible power supplies (UPS).
  5. Protection circuits: The device's avalanche energy capability and fast reverse recovery time make it suitable for use in protection circuits, such as in overvoltage and overcurrent protection circuits.

In summary, the STD18N65M5 is a high voltage N-channel MOSFET transistor that offers a combination of high voltage and current capabilities, low on-state resistance, and fast switching capabilities. It is suitable for use in a wide range of applications, including high voltage switching, power management, motor control, inverters, and protection circuits.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD18N65M5 Documents

Download datasheets and manufacturer documentation for STD18N65M5

Ersa Product / Process Change Notification (PDF)       Product Change Notification (PDF)      

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