STMicroelectronics_STB20N65M5
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STMicroelectronics
STB20N65M5

278-STB20N65M5
PDF Datasheet
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package
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Tech Specifications

Package/Case
TO-263-3
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
710V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
190MR
Fall Time
7.5ns
Gate to Source Voltage (Vgs)
25V
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STB20N65M5 Description

STB20N65M5 Description

The STB20N65M5 is a high-performance MOSFET N-CH 650V 18A D2PAK from STMicroelectronics. This device is designed to deliver exceptional performance in a wide range of applications. With its advanced MOSFET technology, the STB20N65M5 offers superior electrical characteristics, making it an ideal choice for demanding applications.

STB20N65M5 Features

  • High Drain to Source Voltage (Vdss): The STB20N65M5 can handle a maximum drain to source voltage of 650V, making it suitable for high-voltage applications.
  • Low Rds On (Max): With a maximum Rds On of 190mOhm at 9A and 10V, the STB20N65M5 offers low on-resistance, ensuring efficient power dissipation.
  • High Current - Continuous Drain (Id): The device can handle a continuous drain current of 18A at 25°C, making it suitable for high-current applications.
  • Low Gate Charge (Qg): The maximum gate charge is 36 nC at 10V, reducing the switching losses and improving efficiency.
  • High Input Capacitance (Ciss): The maximum input capacitance is 1434 pF at 100V, ensuring fast switching speeds.
  • Robust Operating Temperature: The STB20N65M5 can operate at a junction temperature of up to 150°C, making it suitable for high-temperature applications.
  • Compliance with Industry Standards: The device is compliant with the REACH regulation and RoHS3, ensuring environmental and health safety.

STB20N65M5 Applications

The STB20N65M5 is ideal for a variety of applications where high performance, efficiency, and reliability are critical. Some specific use cases include:

  • Power Electronics: Due to its high voltage and current ratings, the STB20N65M5 is well-suited for power electronics applications such as power supplies, motor drives, and inverters.
  • Automotive Applications: The device's robustness and high-temperature operation make it suitable for automotive applications, including electric vehicle (EV) charging systems and battery management systems.
  • Industrial Control Systems: The STB20N65M5 can be used in industrial control systems where high voltage and current ratings are required, such as in motor control and industrial automation.

Conclusion of STB20N65M5

The STB20N65M5 from STMicroelectronics is a powerful MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and fast switching speeds. Its compliance with industry standards and robust operating temperature make it an excellent choice for a wide range of applications in power electronics, automotive, and industrial control systems. With its advanced features and performance benefits, the STB20N65M5 stands out as a reliable and efficient solution for demanding applications.

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STB20N65M5 is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
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