STMicroelectronics
STB20N65M5  
Single FETs, MOSFETs

STMicroelectronics
STB20N65M5
278-STB20N65M5
Ersa
STMicroelectronics-STB20N65M5-datasheets-11693970.pdf
MOSFET N-CH 650V 18A D2PAK
In Stock : 401

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STB20N65M5 Description

STB20N65M5 Description

The STB20N65M5 is a high-performance MOSFET N-CH 650V 18A D2PAK from STMicroelectronics. This device is designed to deliver exceptional performance in a wide range of applications. With its advanced MOSFET technology, the STB20N65M5 offers superior electrical characteristics, making it an ideal choice for demanding applications.

STB20N65M5 Features

  • High Drain to Source Voltage (Vdss): The STB20N65M5 can handle a maximum drain to source voltage of 650V, making it suitable for high-voltage applications.
  • Low Rds On (Max): With a maximum Rds On of 190mOhm at 9A and 10V, the STB20N65M5 offers low on-resistance, ensuring efficient power dissipation.
  • High Current - Continuous Drain (Id): The device can handle a continuous drain current of 18A at 25°C, making it suitable for high-current applications.
  • Low Gate Charge (Qg): The maximum gate charge is 36 nC at 10V, reducing the switching losses and improving efficiency.
  • High Input Capacitance (Ciss): The maximum input capacitance is 1434 pF at 100V, ensuring fast switching speeds.
  • Robust Operating Temperature: The STB20N65M5 can operate at a junction temperature of up to 150°C, making it suitable for high-temperature applications.
  • Compliance with Industry Standards: The device is compliant with the REACH regulation and RoHS3, ensuring environmental and health safety.

STB20N65M5 Applications

The STB20N65M5 is ideal for a variety of applications where high performance, efficiency, and reliability are critical. Some specific use cases include:

  • Power Electronics: Due to its high voltage and current ratings, the STB20N65M5 is well-suited for power electronics applications such as power supplies, motor drives, and inverters.
  • Automotive Applications: The device's robustness and high-temperature operation make it suitable for automotive applications, including electric vehicle (EV) charging systems and battery management systems.
  • Industrial Control Systems: The STB20N65M5 can be used in industrial control systems where high voltage and current ratings are required, such as in motor control and industrial automation.

Conclusion of STB20N65M5

The STB20N65M5 from STMicroelectronics is a powerful MOSFET that offers a combination of high voltage and current ratings, low on-resistance, and fast switching speeds. Its compliance with industry standards and robust operating temperature make it an excellent choice for a wide range of applications in power electronics, automotive, and industrial control systems. With its advanced features and performance benefits, the STB20N65M5 stands out as a reliable and efficient solution for demanding applications.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB20N65M5 Documents

Download datasheets and manufacturer documentation for STB20N65M5

Ersa STx20N65M5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB20N65M5 View All Specifications      
Ersa STx20N65M5      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service