STMicroelectronics

STP18N65M5  

Single FETs, MOSFETs

STP18N65M5 Description

The STP18N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed to meet the demands of modern electronic applications. With a drain-to-source voltage of 650V, continuous drain current of 15A at 25°C, and a maximum power dissipation of 110W, this MOSFET is ideal for high-voltage, high-current applications.

STP18N65M5 Features

• High Voltage and Current Ratings: The STP18N65M5 boasts a drain-to-source voltage of 650V and a continuous drain current of 15A at 25°C, making it suitable for high-voltage, high-current applications.
• Low On-Resistance: With a maximum on-resistance of 220mOhm at 7.5A and 10V, the STP18N65M5 offers low power dissipation and high efficiency.
• Robust Gate Drive: The device has a maximum gate-source voltage of ±25V, ensuring reliable operation across a wide range of gate drive conditions.
• Low Gate Charge: The maximum gate charge is 31nC at 10V, contributing to faster switching speeds and lower switching losses.
• Through-Hole Mounting: The STP18N65M5 is available in a through-hole TO220 package, providing a robust and reliable mechanical connection for various applications.
• Compliance: The device is compliant with RoHS3 and REACH standards, ensuring environmental and safety compliance in electronic designs.

STP18N65M5 Applications

The STP18N65M5 is ideal for a wide range of applications, including:

• Power Supplies: Due to its high voltage and current ratings, the STP18N65M5 is well-suited for power supply designs, including switch-mode power supplies (SMPS) and linear regulators.
• Motor Controls: The device's high current capability makes it suitable for motor control applications, such as electric vehicles, industrial automation, and robotics.
• Industrial Automation: The STP18N65M5's robust performance and compliance with safety standards make it an excellent choice for industrial automation systems, including motor drives and control circuits.
• RF Power Amplifiers: The low gate charge and high voltage ratings of the STP18N65M5 make it suitable for RF power amplifiers in communication systems.

Conclusion of STP18N65M5

The STP18N65M5 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage, low on-resistance, and robust gate drive capabilities. Its compliance with RoHS3 and REACH standards, along with its through-hole mounting, makes it an ideal choice for a wide range of applications, including power supplies, motor controls, industrial automation, and RF power amplifiers. With its unique features and advantages, the STP18N65M5 stands out as a reliable and efficient solution for demanding electronic designs.

STP18N65M5 Documents

Download datasheets and manufacturer documentation for STP18N65M5

Datasheets :

STx18N65M5      

Other Related Documents :

STP18N65M5 View All Specifications      

HTML Datasheet :

STx18N65M5