STMicroelectronics

STD140N6F7  

Single FETs, MOSFETs

STD140N6F7 Description

The STD140N6F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power and efficiency. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C, this MOSFET is ideal for high-power switching and amplification applications. The device is housed in a DPAK package, making it suitable for surface mount applications.

STD140N6F7 Features

• High Power Dissipation: The STD140N6F7 can handle a maximum power dissipation of 134W at Tc, making it suitable for high-power applications.
• Low On-Resistance: With a maximum Rds(on) of 3.8mOhm at 40A and 10V, this MOSFET offers low on-resistance for efficient power switching.
• Fast Switching: The device has a low gate charge (Qg) of 55nC at 10V, enabling fast switching and reducing power losses.
• Robust Gate Drive: The STD140N6F7 can handle a maximum gate-source voltage (Vgs) of ±20V, providing robust gate drive capabilities.
• REACH Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring environmental compliance and regulatory adherence.
• Low Moisture Sensitivity: With a moisture sensitivity level (MSL) of 1, the STD140N6F7 can be stored and handled without strict humidity control.

STD140N6F7 Applications

The STD140N6F7 is ideal for a wide range of high-power applications, including:

• Power Supplies: The high voltage and current ratings make it suitable for power supply designs, including DC-DC converters and battery chargers.
• Motor Control: The low on-resistance and fast switching capabilities make it ideal for motor control applications, such as electric vehicles and industrial motor drives.
• Industrial Automation: The robust gate drive and high power dissipation capabilities make it suitable for industrial automation applications, such as robotics and automation control systems.
• RF Power Amplifiers: The low on-resistance and fast switching capabilities make it suitable for RF power amplifiers in communication systems.

Conclusion of STD140N6F7

The STD140N6F7 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high power dissipation, low on-resistance, and fast switching capabilities. Its robust gate drive, REACH compliance, and low moisture sensitivity make it an ideal choice for a wide range of high-power applications, including power supplies, motor control, industrial automation, and RF power amplifiers. With its unique features and advantages over similar models, the STD140N6F7 is a reliable and efficient solution for demanding high-power applications.

STD140N6F7 Documents

Download datasheets and manufacturer documentation for STD140N6F7

Datasheets :

STD140N6F7 Datasheet      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

HTML Datasheet :

STD140N6F7 Datasheet