STMicroelectronics_STD6N62K3

STMicroelectronics
STD6N62K3  
Single FETs, MOSFETs

STMicroelectronics
STD6N62K3
278-STD6N62K3
Ersa
STMicroelectronics-STD6N62K3-datasheets-8873893.pdf
MOSFET N-CH 620V 5.5A DPAK
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STD6N62K3 Description

STD6N62K3 Description

The STD6N62K3 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. This MOSFET features a SuperMESH3™ series design, which optimizes performance and reliability. With a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 5.5A at 25°C, the STD6N62K3 is suitable for various power electronics applications.

STD6N62K3 Features

  • High Voltage and Current Handling: The STD6N62K3 can handle a maximum drain-to-source voltage of 620V and a continuous drain current of 5.5A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: The maximum on-resistance (Rds On) of 1.28Ω at 2.8A and 10V ensures low power dissipation and high efficiency in switching applications.
  • SuperMESH3™ Series: The unique SuperMESH3™ design provides improved performance and reliability compared to traditional MOSFETs.
  • Robust Gate Drive: With a maximum gate-source voltage (Vgs) of ±30V, the STD6N62K3 can handle a wide range of gate drive voltages.
  • Low Gate Charge: The maximum gate charge (Qg) of 25.7nC at 10V contributes to faster switching speeds and reduced power consumption.

STD6N62K3 Applications

The STD6N62K3 is ideal for various high-power applications, including:

  • Power Supplies: The high voltage and current ratings make it suitable for power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
  • Motor Control: The low on-resistance and high current handling capabilities make it an excellent choice for motor control applications, such as BLDC (Brushless DC) motor drivers.
  • Industrial Automation: The robust design and high voltage ratings make the STD6N62K3 suitable for industrial automation applications, such as motor drives and power distribution systems.

Conclusion of STD6N62K3

The STD6N62K3 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and a unique SuperMESH3™ design. Its robust gate drive and low gate charge make it an ideal choice for high-power applications, such as power supplies, motor control, and industrial automation. With its advanced features and performance benefits, the STD6N62K3 stands out as a superior solution in the competitive landscape of MOSFETs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD6N62K3 Documents

Download datasheets and manufacturer documentation for STD6N62K3

Ersa Box Label Chg 28/Jul/2016      
Ersa STD6N62K3 View All Specifications      
Ersa New Lead Frame Design 17/Mar/2023      

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