STMicroelectronics
STF12N65M5
Single FETs, MOSFETs
STF12N65M5
278-STF12N65M5
STMicroelectronics-STF12N65M5-datasheets-9448675.pdf
MOSFET N-CH 650V 8.5A TO220FP
In Stock : 806
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
ADD TO RFQ LIST
.png?x-oss-process=image/format,webp/resize,p_30)
STF12N65M5 Description
STF12N65M5 Description
The STF12N65M5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 8.5A at 25°C, this N-channel device is well-suited for various power electronics applications.
STF12N65M5 Features
- High Voltage and Current Ratings: The STF12N65M5 boasts a drain-to-source voltage of 650V and a continuous drain current of 8.5A at 25°C, making it ideal for high-power applications.
- Low On-Resistance: With a maximum Rds(on) of 430mOhm at 4.3A and 10V, this device offers low conduction losses, improving overall efficiency.
- Robust Gate Drive: The STF12N65M5 features a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation across a wide range of gate drive conditions.
- Low Gate Charge: A maximum gate charge (Qg) of 22nC at 10V contributes to faster switching speeds and reduced switching losses.
- Thermal Management: The device can dissipate up to 25W of power, making it suitable for applications with high thermal demands.
- Environmental Compliance: The STF12N65M5 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.
STF12N65M5 Applications
The STF12N65M5 is ideal for a variety of power electronics applications, including:
- Power Supplies: Due to its high voltage and current ratings, this MOSFET is well-suited for use in power supply designs, particularly in switch-mode power supplies (SMPS) and power factor correction (PFC) circuits.
- Motor Control: The STF12N65M5's low on-resistance and high current capabilities make it an excellent choice for motor control applications, such as electric vehicle (EV) motor drives and industrial motor control systems.
- Industrial Automation: This MOSFET's robust performance characteristics make it suitable for use in industrial automation equipment, including robotics and automated machinery.
Conclusion of STF12N65M5
The STF12N65M5 from STMicroelectronics is a versatile and high-performance MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and robust gate drive capabilities. Its compliance with environmental regulations and suitability for a wide range of power electronics applications make it an excellent choice for designers looking to optimize performance and efficiency in their next-generation products.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STF12N65M5 Documents
Download datasheets and manufacturer documentation for STF12N65M5
STx12N65M5 STF12N65M5 View All Specifications STx12N65M5 Related Parts
Shopping Guide
Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service
Follow Us
Please find more information about us from below social media and interact with us!
Information
ERSA LIMITED
[email protected] TEL.:+65 (3) 1252045
260B ANG MO KIO STREET 21 #18-153 KEBUN BARU COURT SINGAPORE
FLAT/RM A7/F KIMLEY COMMERCIAL BUILDING 142-146 QUEEN'S ROAD CENTRAL HK
.png?x-oss-process=image/format,webp/resize,h_32)
©2025 ERSA Electronics Corporation.