The STW31N65M5 from STMicroelectronics is a high-performance N-channel 650V power MOSFET designed for demanding switching applications. Built on the advanced MDmesh™ V technology, it delivers superior efficiency with low conduction and switching losses. With a continuous drain current (Id) of 22A (Tc) and a low on-resistance (Rds(on)) of 148mOhm at 10V gate drive, this MOSFET ensures high power density and thermal stability. The device operates reliably up to 150°C junction temperature (TJ) and features a robust ±25V gate-source voltage (Vgs) tolerance, making it suitable for harsh environments. Packaged in a TO-247 through-hole format, it is optimized for high-power applications requiring durability and ease of mounting.
The STW31N65M5 stands out as a high-efficiency, high-reliability 650V MOSFET for power electronics. Its MDmesh™ V technology, low switching losses, and robust TO-247 packaging make it ideal for industrial, automotive, and renewable energy applications. Engineers can leverage its low Rds(on), high current capability, and thermal performance to design compact, energy-efficient systems. With STMicroelectronics' proven quality, this MOSFET is a top choice for demanding power conversion tasks.
Download datasheets and manufacturer documentation for STW31N65M5