STMicroelectronics_STW31N65M5

STMicroelectronics
STW31N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW31N65M5
278-STW31N65M5
Ersa
STMicroelectronics-STW31N65M5-datasheets-7435560.pdf
MOSFET N-CH 650V 22A TO247
In Stock : 91

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STW31N65M5 Description

STW31N65M5 Description

The STW31N65M5 from STMicroelectronics is a high-performance N-channel 650V power MOSFET designed for demanding switching applications. Built on the advanced MDmesh™ V technology, it delivers superior efficiency with low conduction and switching losses. With a continuous drain current (Id) of 22A (Tc) and a low on-resistance (Rds(on)) of 148mOhm at 10V gate drive, this MOSFET ensures high power density and thermal stability. The device operates reliably up to 150°C junction temperature (TJ) and features a robust ±25V gate-source voltage (Vgs) tolerance, making it suitable for harsh environments. Packaged in a TO-247 through-hole format, it is optimized for high-power applications requiring durability and ease of mounting.

STW31N65M5 Features

  • High Voltage Rating: 650V drain-source voltage (Vdss) ensures suitability for industrial and automotive applications.
  • Low Gate Charge (Qg): 45nC at 10V minimizes switching losses, improving efficiency in high-frequency circuits.
  • Low Input Capacitance (Ciss): 816pF at 100V reduces drive requirements and enhances switching speed.
  • Optimized Rds(on): 148mOhm at 11A, 10V for reduced conduction losses and better thermal performance.
  • Robust Construction: TO-247 package with MSL1 (unlimited shelf life) ensures reliability in mass production.
  • Compliance: ROHS3 and REACH compliant, meeting global environmental standards.

STW31N65M5 Applications

  • Switched-Mode Power Supplies (SMPS): High efficiency in PFC, LLC, and flyback topologies.
  • Motor Drives & Inverters: Ideal for industrial motor control and servo systems due to low Rds(on) and high current handling.
  • Renewable Energy Systems: Solar inverters and wind power converters benefit from its high voltage and thermal resilience.
  • Automotive & Industrial Power Modules: Suited for EV charging, DC-DC converters, and UPS systems.
  • High-Frequency Switching: Low Qg and Ciss make it perfect for resonant and hard-switching applications.

Conclusion of STW31N65M5

The STW31N65M5 stands out as a high-efficiency, high-reliability 650V MOSFET for power electronics. Its MDmesh™ V technology, low switching losses, and robust TO-247 packaging make it ideal for industrial, automotive, and renewable energy applications. Engineers can leverage its low Rds(on), high current capability, and thermal performance to design compact, energy-efficient systems. With STMicroelectronics' proven quality, this MOSFET is a top choice for demanding power conversion tasks.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW31N65M5 Documents

Download datasheets and manufacturer documentation for STW31N65M5

Ersa STx31N65M5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW31N65M5 View All Specifications      
Ersa STx31N65M5      

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