The STW18N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using advanced MDmesh™ V technology, it offers a robust 650V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 15A (Tc). With an Rds(on) as low as 220mΩ at 10V gate drive, this device ensures efficient power handling while minimizing conduction losses. The MOSFET operates reliably up to 150°C junction temperature (TJ), making it suitable for high-temperature environments. Packaged in a TO-247 through-hole format, it provides excellent thermal dissipation, supporting a maximum power dissipation of 110W (Tc).
The STW18N65M5 is ideal for:
The STW18N65M5 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its low Rds(on), high voltage capability, and advanced MDmesh™ V technology make it superior to conventional MOSFETs in efficiency-critical applications. Whether in industrial motor drives, renewable energy systems, or high-power SMPS, this device delivers optimal performance, thermal stability, and long-term durability, making it a top choice for engineers designing next-generation power solutions.
Download datasheets and manufacturer documentation for STW18N65M5