STMicroelectronics_STW18N65M5

STMicroelectronics
STW18N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW18N65M5
278-STW18N65M5
Ersa
STMicroelectronics-STW18N65M5-datasheets-8426694.pdf
MOSFET N-CH 650V 15A TO247
In Stock : 1658

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STW18N65M5 Description

STW18N65M5 Description

The STW18N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using advanced MDmesh™ V technology, it offers a robust 650V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 15A (Tc). With an Rds(on) as low as 220mΩ at 10V gate drive, this device ensures efficient power handling while minimizing conduction losses. The MOSFET operates reliably up to 150°C junction temperature (TJ), making it suitable for high-temperature environments. Packaged in a TO-247 through-hole format, it provides excellent thermal dissipation, supporting a maximum power dissipation of 110W (Tc).

STW18N65M5 Features

  • High Voltage & Current Rating: 650V Vdss and 15A Id ensure robust performance in high-power circuits.
  • Low Rds(on): 220mΩ @ 10V reduces conduction losses, improving efficiency.
  • MDmesh™ V Technology: Enhances switching performance and reduces gate charge (Qg: 31nC @ 10V).
  • Wide Gate-Source Voltage Range: Supports ±25V Vgs, offering flexibility in drive circuitry.
  • Thermal Efficiency: TO-247 package with high power dissipation (110W) for effective heat management.
  • Reliability: RoHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.

STW18N65M5 Applications

The STW18N65M5 is ideal for:

  • Switched-Mode Power Supplies (SMPS): High efficiency and low losses make it perfect for AC-DC converters.
  • Motor Drives & Inverters: Robust voltage handling suits industrial motor control systems.
  • Solar Inverters & Energy Storage: High-temperature tolerance ensures reliability in renewable energy applications.
  • Induction Heating & Welding Equipment: Fast switching and low Rds(on) enhance performance in high-frequency circuits.

Conclusion of STW18N65M5

The STW18N65M5 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its low Rds(on), high voltage capability, and advanced MDmesh™ V technology make it superior to conventional MOSFETs in efficiency-critical applications. Whether in industrial motor drives, renewable energy systems, or high-power SMPS, this device delivers optimal performance, thermal stability, and long-term durability, making it a top choice for engineers designing next-generation power solutions.

Tech Specifications

Configuration
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Material
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STW18N65M5 Documents

Download datasheets and manufacturer documentation for STW18N65M5

Ersa STx18N65M5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW18N65M5 View All Specifications      
Ersa STx18N65M5      

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