The STP7N80K5 from STMicroelectronics is an N-channel 800V MOSFET belonging to the SuperMESH5™ series, designed for high-voltage switching applications. With a continuous drain current (Id) of 6A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 1.2Ω at 3A, 10V, this device ensures efficient power handling with minimal conduction losses. Its 800V drain-to-source voltage (Vdss) rating makes it suitable for demanding high-voltage circuits, while the ±30V gate-source voltage (Vgs) tolerance provides robust gate drive flexibility. Packaged in a TO-220 through-hole format, the STP7N80K5 is ideal for applications requiring high reliability and thermal performance.
The STP7N80K5 excels in high-voltage power conversion and switching applications, including:
The STP7N80K5 combines high-voltage capability, low conduction losses, and fast switching performance, making it a superior choice for power electronics designers. Its SuperMESH5™ technology and TO-220 package ensure thermal efficiency and ease of integration, while compliance with RoHS3 and REACH underscores its environmental suitability. Whether in industrial, renewable energy, or consumer applications, this MOSFET delivers reliability, efficiency, and performance in demanding high-voltage scenarios.
Download datasheets and manufacturer documentation for STP7N80K5