STMicroelectronics_STP7N80K5

STMicroelectronics
STP7N80K5  
Single FETs, MOSFETs

STMicroelectronics
STP7N80K5
278-STP7N80K5
Ersa
STMicroelectronics-STP7N80K5-datasheets-4447301.pdf
MOSFET N-CH 800V 6A TO220
In Stock : 5000

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STP7N80K5 Description

STP7N80K5 Description

The STP7N80K5 from STMicroelectronics is an N-channel 800V MOSFET belonging to the SuperMESH5™ series, designed for high-voltage switching applications. With a continuous drain current (Id) of 6A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 1.2Ω at 3A, 10V, this device ensures efficient power handling with minimal conduction losses. Its 800V drain-to-source voltage (Vdss) rating makes it suitable for demanding high-voltage circuits, while the ±30V gate-source voltage (Vgs) tolerance provides robust gate drive flexibility. Packaged in a TO-220 through-hole format, the STP7N80K5 is ideal for applications requiring high reliability and thermal performance.

STP7N80K5 Features

  • High Voltage Rating: 800V Vdss for robust performance in high-voltage environments.
  • Low Gate Charge (Qg): 13.4nC at 10V ensures fast switching and reduced drive losses.
  • Low Input Capacitance (Ciss): 360pF at 100V minimizes switching delays and improves efficiency.
  • SuperMESH5™ Technology: Enhances switching performance and reduces conduction losses.
  • High Power Dissipation: 110W (Tc) enables reliable operation under high thermal stress.
  • Wide Vgs Range: ±30V allows compatibility with various drive circuits.
  • RoHS3 & REACH Compliant: Meets environmental and regulatory standards.

STP7N80K5 Applications

The STP7N80K5 excels in high-voltage power conversion and switching applications, including:

  • Switch-Mode Power Supplies (SMPS): Efficient high-voltage switching in AC-DC and DC-DC converters.
  • Industrial Motor Drives: Reliable performance in motor control and inverter circuits.
  • Lighting Systems: Suitable for LED drivers and electronic ballasts.
  • Renewable Energy: Used in solar inverters and power conditioning systems.
  • Consumer Electronics: Power management in high-voltage appliances.

Conclusion of STP7N80K5

The STP7N80K5 combines high-voltage capability, low conduction losses, and fast switching performance, making it a superior choice for power electronics designers. Its SuperMESH5™ technology and TO-220 package ensure thermal efficiency and ease of integration, while compliance with RoHS3 and REACH underscores its environmental suitability. Whether in industrial, renewable energy, or consumer applications, this MOSFET delivers reliability, efficiency, and performance in demanding high-voltage scenarios.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP7N80K5 Documents

Download datasheets and manufacturer documentation for STP7N80K5

Ersa STx7N80K5      
Ersa STP7N80K5 View All Specifications      
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