STMicroelectronics_STF25N80K5

STMicroelectronics
STF25N80K5  
Single FETs, MOSFETs

STMicroelectronics
STF25N80K5
278-STF25N80K5
Ersa
STMicroelectronics-STF25N80K5-datasheets-1271532.pdf
MOSFET N-CH 800V 19.5A TO220FP
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    STF25N80K5 Description

    STF25N80K5 is a high voltage N-channel power MOSFET from STMicroelectronics. It is designed for high voltage applications and offers excellent electrical characteristics and performance.

    Description:

    The STF25N80K5 is a N-channel power MOSFET in a TO-220 package. It has a drain-source voltage (VDS) of 800V, a continuous drain current (ID) of 25A, and a gate-source voltage (VGS) of -1V to 10V. The device also has a low on-state resistance (RDS(on)) of 0.055 ohms maximum, which helps to minimize power dissipation and improve efficiency.

    Features:

    1. High voltage operation: The STF25N80K5 can operate at drain-source voltages up to 800V, making it suitable for high voltage applications.
    2. High current capability: The device can handle continuous drain currents up to 25A, making it suitable for high current applications.
    3. Low on-state resistance: The low on-state resistance of the device helps to minimize power dissipation and improve efficiency.
    4. High switching speed: The device has a fast switching speed, which helps to reduce switching losses and improve overall system performance.
    5. Robust design: The device is designed to be robust and reliable, with built-in protection features such as over-voltage, over-current, and over-temperature protection.

    Applications:

    The STF25N80K5 is suitable for a wide range of high voltage and high current applications, including:

    1. Motor control: The device can be used in motor control applications such as HVAC systems, industrial automation, and robotics.
    2. Power supplies: The device can be used in power supply applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    3. Renewable energy systems: The device can be used in renewable energy systems such as solar panel inverters and wind turbine converters.
    4. Electric vehicles: The device can be used in electric vehicle (EV) applications such as battery management systems and motor controllers.
    5. Industrial control: The device can be used in industrial control applications such as conveyor systems, machine tools, and packaging equipment.

    Overall, the STF25N80K5 is a high performance power MOSFET that offers excellent electrical characteristics and performance for a wide range of high voltage and high current applications. Its robust design and built-in protection features make it a reliable choice for demanding applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Mounting Style
    Unit Weight
    Vgs - Gate-Source Voltage
    Id - Continuous Drain Current
    Transistor Polarity
    RoHS
    Qg - Gate Charge
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Tradename
    Transistor Type
    Number of Channels
    Maximum Operating Temperature
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS
    Rds On - Drain-Source Resistance

    STF25N80K5 Documents

    Download datasheets and manufacturer documentation for STF25N80K5

    Ersa STx25N80K5      
    Ersa STF25N80K5 View All Specifications      
    Ersa STx25N80K5      

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