STMicroelectronics_STF12N60M2

STMicroelectronics
STF12N60M2  
Single FETs, MOSFETs

STMicroelectronics
STF12N60M2
278-STF12N60M2
Ersa
STMicroelectronics-STF12N60M2-datasheets-6045558.pdf
MOSFET N-CH 600V 9A TO220FP
In Stock : 2021

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STF12N60M2 Description

STF12N60M2 Description

The STF12N60M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain to source voltage (Vdss) of 600V and a continuous drain current (Id) of 9A at 25°C, this device is well-suited for demanding power electronics applications. The STF12N60M2 features a low on-resistance (Rds On) of 450mOhm at 4.5A and 10V, ensuring efficient power dissipation and reduced power losses.

STF12N60M2 Features

  • 600V Drain to Source Voltage (Vdss): Capable of handling high voltage applications.
  • 9A Continuous Drain Current (Id) @ 25°C: Suitable for high current applications.
  • Low On-Resistance (Rds On): 450mOhm at 4.5A and 10V, reducing power losses.
  • Robust Gate Charge (Qg): 16nC at 10V, ensuring fast switching and low switching losses.
  • Wide Operating Temperature Range: -55°C to 150°C (TJ), making it suitable for various environments.
  • Through Hole Mounting Type: Facilitates easy integration into existing designs.
  • REACH Unaffected and RoHS3 Compliant: Ensuring environmental and regulatory compliance.

STF12N60M2 Applications

The STF12N60M2 is ideal for a variety of applications where high voltage and current handling are required. Some specific use cases include:

  1. Power Supplies: Due to its high voltage and current ratings, the STF12N60M2 is well-suited for power supply designs.
  2. Motor Drives: The device's robust performance makes it suitable for motor control applications.
  3. Industrial Automation: The STF12N60M2's high voltage and current capabilities make it ideal for industrial automation systems.
  4. Automotive Applications: The device's high temperature rating and robust performance make it suitable for automotive electronics.

Conclusion of STF12N60M2

The STF12N60M2 from STMicroelectronics is a powerful N-Channel MOSFET that offers high voltage and current handling capabilities, making it an excellent choice for demanding power electronics applications. Its low on-resistance, robust gate charge, and wide operating temperature range provide significant performance benefits over similar models. With its unique features and advantages, the STF12N60M2 is an ideal solution for power supplies, motor drives, industrial automation, and automotive applications.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product
Channel Mode
Product Status
Fall Time
RoHS
Drain to Source Voltage (Vdss)
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Rise Time
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
FET Type
Supplier Device Package
Qg - Gate Charge
Power Dissipation (Max)
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Length
Pd - Power Dissipation
Base Product Number
Supplier Package
ECCN (US)
Grade
ECCN (EU)
RoHs compliant

STF12N60M2 Documents

Download datasheets and manufacturer documentation for STF12N60M2

Ersa STF12N60M2      
Ersa STF12N60M2      

Shopping Guide

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