STMicroelectronics

STB13N80K5  

Single FETs, MOSFETs

STB13N80K5 Description

The STB13N80K5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using SuperMESH5™ technology, it delivers an impressive 800V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). With a low on-resistance (Rds(on)) of 450mΩ at 10V gate drive, this device minimizes conduction losses, enhancing efficiency in high-voltage circuits. The MOSFET is housed in a D2PAK (TO-263) surface-mount package, making it suitable for compact and high-power-density designs.

STB13N80K5 Features

• High Voltage & Current Handling: Supports 800V Vdss and 12A Id, ideal for robust power applications.
• Low Rds(on): 450mΩ @ 10V Vgs ensures reduced power dissipation and improved thermal performance.
• SuperMESH5™ Technology: Enhances switching efficiency and ruggedness, offering superior performance over standard MOSFETs.
• Fast Switching: Gate charge (Qg) of 29nC @ 10V and input capacitance (Ciss) of 870pF @ 100V enable high-speed operation.
• Wide Vgs Range: ±30V maximum gate-source voltage provides flexibility in drive circuitry.
• Thermal Efficiency: 190W max power dissipation (Tc) ensures reliability under high-load conditions.
• Compliance: ROHS3 and REACH compliant, with MSL 1 (unlimited) moisture sensitivity for easy handling.

STB13N80K5 Applications

• Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters, PFC stages, and offline power supplies.
• Industrial Motor Drives: Efficient control in high-voltage inverters and motor controllers.
• Lighting Systems: LED drivers and HID ballasts requiring high-voltage switching.
• Renewable Energy: Solar inverters and energy storage systems benefiting from low-loss switching.
• Automotive & Telecom: Auxiliary power systems and high-efficiency DC-DC converters.

Conclusion of STB13N80K5

The STB13N80K5 stands out as a high-efficiency, high-voltage MOSFET with low conduction losses and fast switching capabilities, making it ideal for power electronics applications. Its SuperMESH5™ technology ensures superior performance in demanding environments, while the D2PAK package supports space-constrained designs. Whether used in industrial, automotive, or renewable energy systems, this MOSFET delivers reliability, efficiency, and thermal robustness, positioning it as a top choice for engineers seeking high-performance power solutions.

STB13N80K5 Documents

Download datasheets and manufacturer documentation for STB13N80K5

PCN Assembly/Origin :

IPD/15/9124 20/Mar/2015      

Datasheets :

ST(B,F,P,W)13N80K5      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      

HTML Datasheet :

ST(B,F,P,W)13N80K5      

PCN Design/Specification :

IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013