STMicroelectronics_STW10NK60Z

STMicroelectronics
STW10NK60Z  
Single FETs, MOSFETs

STMicroelectronics
STW10NK60Z
278-STW10NK60Z
MOSFET N-CH 600V 10A TO247-3
In Stock : 488

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STW10NK60Z Description

STW10NK60Z Description

The STW10NK60Z is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. This MOSFET is part of the SuperMESH™ series, known for its advanced technology and superior performance. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at 25°C, the STW10NK60Z is capable of handling high power applications with ease.

STW10NK60Z Features

  • 600V Drain-to-Source Voltage (Vdss): This high voltage rating makes the STW10NK60Z suitable for applications requiring high voltage handling, such as power supplies and motor controls.
  • 10A Continuous Drain Current (Id) @ 25°C: The STW10NK60Z can handle a continuous drain current of 10A, making it ideal for high current applications.
  • 750mOhm Rds On (Max) @ 4.5A, 10V: The low on-resistance of the STW10NK60Z contributes to its high efficiency, reducing power losses and improving performance.
  • 4.5V Vgs(th) (Max) @ 250µA: The STW10NK60Z has a low threshold voltage, allowing for easy gate drive and reduced power consumption.
  • 156W Power Dissipation (Max): The STW10NK60Z can dissipate up to 156W of power, making it suitable for high power applications.
  • Through Hole Mounting Type: The STW10NK60Z is available in a through-hole package, providing a reliable and robust connection in various circuit designs.

STW10NK60Z Applications

The STW10NK60Z is ideal for a wide range of applications due to its high voltage and current ratings, low on-resistance, and high power dissipation capabilities. Some specific use cases include:

  1. Power Supplies: The high voltage and current ratings make the STW10NK60Z suitable for power supply applications, where high efficiency and reliability are critical.
  2. Motor Controls: The STW10NK60Z can be used in motor control applications, where high voltage and current handling are required.
  3. Industrial Automation: The STW10NK60Z's robust performance makes it suitable for industrial automation applications, where high power handling and reliability are essential.

Conclusion of STW10NK60Z

The STW10NK60Z is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and high power dissipation. Its unique features, such as the SuperMESH™ technology and low threshold voltage, make it an ideal choice for high-power applications like power supplies, motor controls, and industrial automation. With its robust performance and reliability, the STW10NK60Z is a valuable addition to any high-power electronics design.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Forward Transconductance - Min
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STW10NK60Z Documents

Download datasheets and manufacturer documentation for STW10NK60Z

Ersa STx10NK60Z      
Ersa Box Label Chg 28/Jul/2016       Standard outer labelling 15/Nov/2023      
Ersa STW10NK60Z View All Specifications      
Ersa STx10NK60Z      

Shopping Guide

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