STMicroelectronics

STQ1NK80ZR-AP  

Single FETs, MOSFETs

STQ1NK80ZR-AP is a high-power MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The STQ1NK80ZR-AP is an N-channel MOSFET transistor with a maximum drain-source voltage (Vds) of 80V and a continuous drain current (Id) of 1.0A. It features a low on-state resistance (Rds(on)) of 4.5mΩ, which helps to minimize power dissipation and improve efficiency.

Features:

1. High-power MOSFET transistor
2. Maximum drain-source voltage (Vds) of 80V
3. Continuous drain current (Id) of 1.0A
4. Low on-state resistance (Rds(on)) of 4.5mΩ
5. Suitable for use in a wide range of power electronic applications

Applications:

1. Motor control systems
2. Power supplies
3. Renewable energy systems
4. Battery management systems
5. Industrial control systems
6. Automotive applications
7. Any application requiring high-power switching and control

Overall, the STQ1NK80ZR-AP is a versatile and high-performance MOSFET transistor that can be used in a variety of power electronic applications. Its low on-state resistance and high maximum drain-source voltage make it an ideal choice for applications requiring efficient power switching and control.

STQ1NK80ZR-AP Documents

Download datasheets and manufacturer documentation for STQ1NK80ZR-AP

PCN Assembly/Origin :

Mold Component 22/Nov/2023      

Datasheets :

STx1NK80ZR(R-AP,-1)      

HTML Datasheet :

STx1NK80ZR(R-AP,-1)