STMicroelectronics
STW33N60M2
Single FETs, MOSFETs
STW33N60M2
278-STW33N60M2
STMicroelectronics-STW33N60M2-datasheets-11248413.pdf
MOSFET N-CH 600V 26A TO247
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STW33N60M2 Description
STW33N60M2 is a high voltage N-channel power MOSFET from STMicroelectronics. It is designed for high voltage applications and offers excellent electrical characteristics and performance.
Description:
The STW33N60M2 is a high voltage N-channel power MOSFET with a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 33A. It features a low on-state resistance (RDS(on)) of 0.068 Ohms, which helps to minimize power dissipation and improve efficiency in power conversion applications.
Features:
- High voltage operation: The STW33N60M2 is designed to operate at high voltages, making it suitable for use in power conversion applications such as motor control, power supplies, and renewable energy systems.
- Low on-state resistance: The low RDS(on) of the STW33N60M2 helps to minimize power dissipation and improve efficiency in power conversion applications.
- High switching speed: The STW33N60M2 has a fast switching speed, which helps to reduce switching losses and improve overall system efficiency.
- Robust protection features: The STW33N60M2 includes built-in protection features such as over-voltage, over-current, and over-temperature protection, which help to ensure reliable operation and prevent damage to the device in the event of a fault.
Applications:
The STW33N60M2 is suitable for a wide range of high voltage power conversion applications, including:
- Motor control: The STW33N60M2 can be used in motor control applications such as industrial motor drives, HVAC systems, and robotics.
- Power supplies: The STW33N60M2 is suitable for use in power supply applications such as AC/DC converters, DC/DC converters, and battery chargers.
- Renewable energy systems: The STW33N60M2 can be used in renewable energy systems such as solar power inverters and wind turbine converters.
- Automotive applications: The STW33N60M2 is suitable for use in automotive applications such as electric vehicle charging systems and power steering systems.
Overall, the STW33N60M2 is a high performance, high voltage power MOSFET that offers excellent electrical characteristics and robust protection features, making it an ideal choice for a wide range of power conversion applications.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STW33N60M2 Documents
Download datasheets and manufacturer documentation for STW33N60M2
IPG/14/8475 16/May/2014 STx33N60M2 Standard outer labelling 15/Nov/2023 STx33N60M2 STx33N60M2 Datasheet Chg 31/May/2019 Related Parts
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