STMicroelectronics_STP10N60M2
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STMicroelectronics
STP10N60M2

278-STP10N60M2
PDF Datasheet
600V 7.5A N-CH MOSFET TO-220 Power Transistor
16 Weeks

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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
560mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
600mR
Fall Time
13.2ns
Gate to Source Voltage (Vgs)
25V
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STP10N60M2 Description

STP10N60M2 Description

The STP10N60M2 is a high-performance MOSFET N-CH 600V 7.5A TO220 from STMicroelectronics, designed for demanding power electronics applications. This device offers superior technical specifications, ensuring reliable performance and efficiency. With a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7.5A at 25°C, the STP10N60M2 is well-suited for various power management tasks.

STP10N60M2 Features

  • 600V Drain-Source Voltage (Vdss): Capable of handling high voltage applications with ease.
  • 7.5A Continuous Drain Current (Id) @ 25°C: Delivers robust current handling capabilities.
  • 600mOhm Rds On (Max) @ 3A, 10V: Ensures low on-resistance for efficient power dissipation.
  • 4V Vgs(th) (Max) @ 250µA: Provides a low threshold voltage for improved switching performance.
  • 13.5 nC Gate Charge (Qg) (Max) @ 10V: Minimizes switching losses and enhances efficiency.
  • 400 pF Input Capacitance (Ciss) (Max) @ 100 V: Offers fast response times and reduced parasitic effects.
  • 85W Power Dissipation (Max): Allows for high power applications without compromising reliability.
  • ±25V Vgs (Max): Supports a wide range of gate voltages for flexibility in circuit design.
  • REACH Unaffected and ROHS3 Compliant: Ensures environmental and regulatory compliance.
  • Moisture Sensitivity Level (MSL) 1 (Unlimited): Facilitates handling and storage without moisture-related concerns.

STP10N60M2 Applications

The STP10N60M2 is ideal for a variety of applications where high voltage and current handling are required. Some specific use cases include:

  • Power Supplies: Utilized in the design of high-efficiency power supply units for various electronic devices.
  • Motor Controls: Effective in controlling the speed and direction of electric motors in industrial and automotive applications.
  • Solar Inverters: Enhances the performance of solar power systems by managing the conversion of DC to AC power.
  • Battery Management Systems: Ensures efficient charging and discharging cycles in battery-powered devices.

Conclusion of STP10N60M2

The STP10N60M2 stands out as a reliable and efficient MOSFET option for high-power applications. Its combination of high voltage and current ratings, low on-resistance, and compliance with environmental regulations make it a preferred choice in the electronics industry. With its unique features and advantages, the STP10N60M2 is set to deliver exceptional performance in a wide range of applications.

FAQ

What package or case is STP10N60M2 available in?
STP10N60M2 is available in the TO-220-3 package / case.
What operating temperature range does STP10N60M2 support?
What is STP10N60M2?
Is STP10N60M2 currently in stock?
What is the standard lead time for STP10N60M2?
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