


STMicroelectronics
STU10N60M2
278-STU10N60M2
PDF Datasheet
600V N-CH MOSFET, 7.5A, 560mR Rds On, IPAK
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Responsible qualityTech Specifications
Package / Case
TO-251-3
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
560mR
Drain to Source Voltage (Vdss)
600V
Fall Time
13.2ns
Gate to Source Voltage (Vgs)
25V
Height
6.2mm
STU10N60M2 Description
N-Channel 600 V 7.5A (Tc) 85W (Tc) Through Hole TO-251 (IPAK)
FAQ
What is the mounting type of STU10N60M2?
STU10N60M2 uses a Through Hole mounting style based on the listed product specifications.
What package or case is STU10N60M2 available in?
What operating temperature range does STU10N60M2 support?
What voltage specification is listed for STU10N60M2?
Is STU10N60M2 currently in stock?



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