The STF7N60M2 is a high-performance MOSFET N-CH 600V 5A TO220FP from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. This device is part of the MDmesh™ II Plus series, known for its superior performance and reliability. With a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 5A at 25°C, the STF7N60M2 is well-suited for various power electronics applications.
STF7N60M2 Features
High Voltage and Current Handling: The STF7N60M2 can handle a maximum drain-to-source voltage of 600V and a continuous drain current of 5A at 25°C, making it ideal for high-power applications.
Low On-Resistance: With a maximum Rds(on) of 950mOhm at 2.5A and 10V, the STF7N60M2 offers low conduction losses, improving efficiency in power conversion systems.
Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±25V, ensuring reliable operation in various gate drive conditions.
Low Gate Charge: The maximum gate charge (Qg) is 8.8nC at 10V, contributing to fast switching speeds and reduced switching losses.
Environmental Compliance: The STF7N60M2 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.
Moisture Sensitivity Level (MSL) 1: This indicates that the device can be stored and handled without special precautions, simplifying logistics and inventory management.
STF7N60M2 Applications
The STF7N60M2 is ideal for a wide range of applications where high voltage and current handling are required, including:
Power Supplies: In switch-mode power supplies (SMPS) and power factor correction (PFC) circuits, the STF7N60M2's high voltage and current ratings make it a suitable choice.
Motor Control: The device's low on-resistance and robust gate drive capabilities make it suitable for motor control applications, such as in industrial automation and robotics.
Battery Management Systems: In battery management systems for electric vehicles and energy storage, the STF7N60M2 can handle the high voltage and current requirements.
Industrial Control: In industrial control systems, the STF7N60M2's ability to handle high voltage and current, along with its robustness, makes it an ideal choice for various control applications.
Conclusion of STF7N60M2
The STF7N60M2 from STMicroelectronics is a high-performance MOSFET that offers a combination of high voltage and current handling capabilities, low on-resistance, and robust gate drive. Its compliance with environmental regulations and moisture sensitivity level of 1 make it a versatile and reliable choice for a wide range of power electronics applications. With its unique features and advantages, the STF7N60M2 stands out as a preferred solution in demanding applications where performance and reliability are critical.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STF7N60M2 Documents
Download datasheets and manufacturer documentation for STF7N60M2
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Shipping Rate
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