STMicroelectronics_STP55NF06L

STMicroelectronics
STP55NF06L  
Single FETs, MOSFETs

STMicroelectronics
STP55NF06L
278-STP55NF06L
MOSFET N-CH 60V 55A TO220AB
In Stock : 3501

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    STP55NF06L Description

    The STP55NF06L is a high-power, high-voltage N-channel MOSFET manufactured by STMicroelectronics. Here is a description of the model, its features, and applications:

    Description:

    The STP55NF06L is an N-channel enhancement mode field-effect transistor (FET) that is designed for high-power applications. It is a member of the STPOWER family of MOSFETs, which are optimized for use in automotive and industrial applications.

    Features:

    1. High Power: The STP55NF06L is designed to handle high power levels, with a continuous drain current (Id) of up to 49A and a drain-source voltage (Vdss) of up to 60V.
    2. Low On-State Resistance: The device has a low on-state resistance (Rdson) of 55mΩ max, which helps to minimize power dissipation and improve efficiency in power conversion applications.
    3. Avalanche Energy Capable: The STP55NF06L is designed to withstand high energy pulses during avalanche transients, making it suitable for use in applications that may experience high-energy transients.
    4. Integrated Bootstrap Diode: The device features an integrated bootstrap diode, which helps to reduce switching losses and improve efficiency in power conversion applications.
    5. Robustness: The STP55NF06L is designed to be robust and reliable, with built-in protection features such as over-temperature protection and over-current protection.

    Applications:

    The STP55NF06L is suitable for a wide range of high-power applications, including:

    1. Motor Control: The device can be used in motor control applications such as electric vehicles, industrial automation, and robotics.
    2. Power Conversion: The STP55NF06L is well-suited for use in power conversion applications such as DC-DC converters, AC-DC converters, and solar inverters.
    3. Automotive Applications: The device is designed to meet the stringent requirements of automotive applications, making it suitable for use in electric and hybrid vehicles.
    4. Industrial Applications: The STP55NF06L can be used in various industrial applications such as power supplies, UPS systems, and motor drives.

    Overall, the STP55NF06L is a high-power, high-voltage MOSFET that offers excellent performance and reliability for a wide range of applications. Its low on-state resistance, integrated bootstrap diode, and robustness make it an ideal choice for power conversion and motor control applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Maximum Diode Forward Voltage (V)
    Series
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP55NF06L Documents

    Download datasheets and manufacturer documentation for STP55NF06L

    Ersa N-Channel STripFET 2nd Generation Products Capacity Extension in ST s Ang Mo Kio (Singapore) FAB (PDF)       TO-220 ECOPACK 2 graded moulding compound assembly capacity expansion - Subcontractor PSI Laguna (Philippines) (PDF)       Product / Process Change Notification (PDF)       Product Change Notification (PDF)       Product Change Notification 2024-04-04 (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      
    Ersa STP55NF06L Symbol & Footprint by SnapMagic      

    Shopping Guide

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