The STP55NF06L is a high-power, high-voltage N-channel MOSFET manufactured by STMicroelectronics. Here is a description of the model, its features, and applications:
Description:
The STP55NF06L is an N-channel enhancement mode field-effect transistor (FET) that is designed for high-power applications. It is a member of the STPOWER family of MOSFETs, which are optimized for use in automotive and industrial applications.
Features:
High Power: The STP55NF06L is designed to handle high power levels, with a continuous drain current (Id) of up to 49A and a drain-source voltage (Vdss) of up to 60V.
Low On-State Resistance: The device has a low on-state resistance (Rdson) of 55mΩ max, which helps to minimize power dissipation and improve efficiency in power conversion applications.
Avalanche Energy Capable: The STP55NF06L is designed to withstand high energy pulses during avalanche transients, making it suitable for use in applications that may experience high-energy transients.
Integrated Bootstrap Diode: The device features an integrated bootstrap diode, which helps to reduce switching losses and improve efficiency in power conversion applications.
Robustness: The STP55NF06L is designed to be robust and reliable, with built-in protection features such as over-temperature protection and over-current protection.
Applications:
The STP55NF06L is suitable for a wide range of high-power applications, including:
Motor Control: The device can be used in motor control applications such as electric vehicles, industrial automation, and robotics.
Power Conversion: The STP55NF06L is well-suited for use in power conversion applications such as DC-DC converters, AC-DC converters, and solar inverters.
Automotive Applications: The device is designed to meet the stringent requirements of automotive applications, making it suitable for use in electric and hybrid vehicles.
Industrial Applications: The STP55NF06L can be used in various industrial applications such as power supplies, UPS systems, and motor drives.
Overall, the STP55NF06L is a high-power, high-voltage MOSFET that offers excellent performance and reliability for a wide range of applications. Its low on-state resistance, integrated bootstrap diode, and robustness make it an ideal choice for power conversion and motor control applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STP55NF06L Documents
Download datasheets and manufacturer documentation for STP55NF06L
N-Channel STripFET 2nd Generation Products Capacity Extension in ST s Ang Mo Kio (Singapore) FAB (PDF) TO-220 ECOPACK 2 graded moulding compound assembly capacity expansion - Subcontractor PSI Laguna (Philippines) (PDF) Product / Process Change Notification (PDF) Product Change Notification (PDF) Product Change Notification 2024-04-04 (PDF) PRODUCT CHANGE NOTIFICATION (PDF)
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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