STMicroelectronics

SCT1000N170  

Single FETs, MOSFETs

SCT1000N170 Description

The SCT1000N170 is a high-performance Silicon Carbide Field-Effect Transistor (SiCFET) manufactured by STMicroelectronics. This device is designed for high-voltage, high-power applications and offers superior performance compared to traditional silicon-based MOSFETs. With a drain-to-source voltage (Vdss) of 1700 V and a maximum power dissipation of 96W at case temperature (Tc), the SCT1000N170 is ideal for demanding applications in the electronics industry.

SCT1000N170 Features

• Input Capacitance (Ciss): The SCT1000N170 has a maximum input capacitance of 133 pF at 1000 V, ensuring fast switching speeds and low power consumption.
• Gate Charge (Qg): The maximum gate charge is 13.3 nC at 20 V, which contributes to the device's high efficiency and low switching losses.
• Rds On (Max): The maximum on-resistance (Rds On) is 1.3 Ohms at 3A and 20V, providing low conduction losses and high efficiency.
• Vgs(th) (Max): The maximum threshold voltage (Vgs(th)) is 3.5V at 1mA, ensuring reliable operation and easy drive.
• Current - Continuous Drain (Id): The SCT1000N170 can handle a continuous drain current of 7A at 25°C, making it suitable for high-power applications.
• Drive Voltage: The device can be driven with a maximum voltage of 20V, ensuring compatibility with various power supplies.
• Mounting Type: The SCT1000N170 is available in a through-hole mounting type, providing mechanical stability and ease of integration into various designs.
• Package: The device is packaged in a HiP247™ tube package, which offers excellent thermal performance and ease of handling.

SCT1000N170 Applications

The SCT1000N170 is ideal for a wide range of high-voltage, high-power applications, including:

1. Power Electronics: Due to its high voltage and power ratings, the SCT1000N170 is suitable for power conversion, regulation, and management in various electronic systems.
2. Industrial Automation: The device's robust performance makes it ideal for motor drives, inverters, and other control systems in industrial automation applications.
3. Renewable Energy: The SCT1000N170 can be used in solar inverters, wind power systems, and other renewable energy applications that require high-voltage, high-power devices.
4. Electric Vehicles (EVs): The device's high voltage and power ratings make it suitable for use in EV charging systems, battery management systems, and other high-power applications in the automotive industry.

Conclusion of SCT1000N170

The SCT1000N170 from STMicroelectronics is a high-performance SiCFET that offers superior performance and reliability for high-voltage, high-power applications. Its unique features, such as low input capacitance, low gate charge, and high efficiency, make it an ideal choice for power electronics, industrial automation, renewable energy, and electric vehicles. With its robust performance and versatility, the SCT1000N170 is a valuable addition to any high-power electronics design.

SCT1000N170 Documents

Download datasheets and manufacturer documentation for SCT1000N170

PCN :

Product Change Notification 2024-06-27 (PDF)       Product Change Notification (PDF)