STMicroelectronics_STB100NF04T4

STMicroelectronics
STB100NF04T4  
Single FETs, MOSFETs

STMicroelectronics
STB100NF04T4
278-STB100NF04T4
MOSFET N-CH 40V 120A D2PAK
In Stock : 2127

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STB100NF04T4 Description

STB100NF04T4 Description

The STB100NF04T4 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power management applications. With a 40V drain-to-source voltage (Vdss) and 120A continuous drain current (Id), it delivers robust switching performance in a compact D2PAK (TO-263) surface-mount package. This device is part of the STripFET™ II series, leveraging advanced MOSFET (Metal Oxide) technology to achieve ultra-low on-resistance (Rds(on)) of just 4.6mΩ at 10V gate drive, ensuring minimal conduction losses. Its automotive-grade qualification makes it suitable for harsh environments, while RoHS3 compliance and REACH unaffected status ensure environmental and regulatory adherence.

STB100NF04T4 Features

  • Low Rds(on): 4.6mΩ @ 50A, 10V for high efficiency and reduced heat dissipation.
  • High Current Handling: 120A (Tc) continuous drain current capability.
  • Fast Switching: Optimized gate charge (Qg) of 150nC @ 10V and input capacitance (Ciss) of 5100pF @ 25V for improved switching performance.
  • Robust Construction: ±20V gate-source voltage (Vgs) tolerance enhances reliability in high-noise environments.
  • Thermal Efficiency: 300W (Tc) power dissipation ensures stable operation under high loads.
  • Automotive Grade: Meets stringent automotive standards for durability.
  • Packaging: Supplied in Tape & Reel (TR) for automated assembly.

STB100NF04T4 Applications

This MOSFET is ideal for:

  • DC-DC Converters: High-efficiency power conversion in industrial and automotive systems.
  • Motor Control: Drives high-current motors in robotics, EVs, and industrial machinery.
  • Power Supplies: Used in SMPS (Switched-Mode Power Supplies) for servers, telecom, and renewable energy systems.
  • Battery Management: Enables high-current discharge protection in Li-ion battery packs.
  • Automotive Systems: Suitable for LED drivers, ABS, and ignition systems due to its rugged design.

Conclusion of STB100NF04T4

The STB100NF04T4 stands out as a high-efficiency, high-current MOSFET with low conduction losses, fast switching, and automotive-grade reliability. Its optimized thermal performance and compact D2PAK package make it a top choice for power electronics engineers designing high-performance converters, motor drives, and energy-efficient systems. With STMicroelectronics' proven STripFET™ II technology, this MOSFET ensures superior performance in demanding applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB100NF04T4 Documents

Download datasheets and manufacturer documentation for STB100NF04T4

Ersa Box Label Chg 28/Jul/2016      
Ersa STB100NF04 View All Specifications      
Ersa D2PAK Lead Modification 04/Oct/2013      

Shopping Guide

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