The STW15NK50Z from STMicroelectronics is an N-channel 500V MOSFET belonging to the SuperMESH™ series, designed for high-voltage switching applications. With a continuous drain current (Id) of 14A (Tc) and low on-resistance (Rds(on)) of 340mΩ @ 7A, 10V, it offers efficient power handling and reduced conduction losses. The device features a robust 500V drain-to-source voltage (Vdss), making it suitable for demanding environments. Packaged in a TO-247-3 through-hole format, it ensures reliable thermal performance with a maximum power dissipation of 160W (Tc).
STW15NK50Z Features
High Voltage & Current Rating: 500V Vdss and 14A Id for power applications.
Low Rds(on): 340mΩ @ 10V gate drive, minimizing power loss.
Fast Switching: Optimized gate charge (Qg: 106nC @ 10V) and input capacitance (Ciss: 2260pF @ 25V) for efficient high-frequency operation.
Wide Gate-Source Voltage Range: ±30V Vgs(max) for flexible drive compatibility.
SuperMESH™ Technology: Enhances ruggedness and avalanche energy tolerance.
Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term stability.
STW15NK50Z Applications
Switched-Mode Power Supplies (SMPS): High-efficiency AC-DC converters.
Motor Drives & Inverters: Robust performance in industrial motor control.
Lighting Systems: Ballasts and LED drivers requiring high-voltage switching.
Renewable Energy: Solar inverters and power conditioning units.
Industrial Automation: High-power switching in control circuits.
Conclusion of STW15NK50Z
The STW15NK50Z is a high-performance 500V MOSFET optimized for efficiency, thermal management, and reliability in power electronics. Its SuperMESH™ technology and low conduction losses make it ideal for SMPS, motor drives, and renewable energy systems. While marked as "Not For New Designs", it remains a dependable choice for legacy or cost-sensitive applications requiring high-voltage switching with robust performance.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant
STW15NK50Z Documents
Download datasheets and manufacturer documentation for STW15NK50Z
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Shipping Rate
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