STMicroelectronics_STD1NK60-1

STMicroelectronics
STD1NK60-1  
Single FETs, MOSFETs

STMicroelectronics
STD1NK60-1
278-STD1NK60-1
Ersa
STMicroelectronics-STD1NK60-1-datasheets-7413656.pdf
MOSFET N-CH 600V 1A IPAK
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STD1NK60-1 Description

STD1NK60-1 Description

The STD1NK60-1 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. This device is part of the SuperMESH™ series, known for its excellent electrical characteristics and robust performance. With a drain-source voltage rating of 600V and a continuous drain current of 1A at 25°C, the STD1NK60-1 is well-suited for various power electronics applications.

STD1NK60-1 Features

  • Technology: MOSFET (Metal Oxide) - Provides high input impedance and low power dissipation.
  • Input Capacitance (Ciss): 156 pF @ 25 V - Minimizes capacitive loading and ensures fast switching.
  • Gate Charge (Qg): 10 nC @ 10 V - Reduces switching losses and improves efficiency.
  • Rds On (Max): 8.5 Ohm @ 500mA, 10V - Offers low on-resistance for minimal power loss.
  • Vgs(th) (Max): 3.7V @ 250µA - Ensures reliable turn-on at low gate voltages.
  • Mounting Type: Through Hole - Facilitates easy integration into existing designs.
  • Package: IPAK - Provides a robust and compact package for high-power applications.

STD1NK60-1 Applications

The STD1NK60-1 is ideal for a variety of high-voltage and high-current applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, the STD1NK60-1 is suitable for use in power supply designs, such as switch-mode power supplies (SMPS) and battery chargers.
  2. Motor Control: Its low on-resistance and high voltage rating make it an excellent choice for motor control applications, where efficient power switching is critical.
  3. Industrial Automation: The robustness and reliability of the STD1NK60-1 make it well-suited for use in industrial automation systems, where high voltage and current handling are required.

Conclusion of STD1NK60-1

The STD1NK60-1 from STMicroelectronics is a powerful and versatile N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and high input capacitance, make it an ideal choice for demanding applications in power electronics, motor control, and industrial automation. With its robust IPAK package and through-hole mounting, the STD1NK60-1 is designed for reliable performance in a wide range of high-power applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD1NK60-1 Documents

Download datasheets and manufacturer documentation for STD1NK60-1

Ersa STD1NK60-1      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STEVAL-ISB001V1: 1 Cell Charger using Discretes      

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