STMicroelectronics_STD2NK90ZT4

STMicroelectronics
STD2NK90ZT4  
Single FETs, MOSFETs

STMicroelectronics
STD2NK90ZT4
278-STD2NK90ZT4
MOSFET N-CH 900V 2.1A DPAK
In Stock : 2003

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    STD2NK90ZT4 Description

    STMicroelectronics' STD2NK90ZT4 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a variety of power electronic applications. Here is a brief description of the model, its features, and potential applications:

    Description:

    The STD2NK90ZT4 is a high-voltage N-channel power MOSFET with a drain-source voltage (Vds) rating of up to 900V. It is designed to operate with a continuous drain current (Id) of up to 2.4A (Ta). The device is available in a TO-220 package, which is a popular and robust package for power transistors.

    Features:

    1. High Voltage Rating: With a Vds of 900V, the STD2NK90ZT4 is suitable for high-voltage applications.
    2. Thermal Performance: The TO-220 package provides good thermal performance, allowing for efficient heat dissipation.
    3. Low On-State Resistance (RDS(on)): The device has a low on-state resistance, which minimizes power dissipation during operation.
    4. High Input Impedance: MOSFETs have high input impedance, making them ideal for use with low-power control circuits.
    5. Fast Switching Speed: The STD2NK90ZT4 is designed for fast switching applications, reducing switching losses and improving efficiency.
    6. Protection Features: The device may include built-in protection features such as overvoltage, overcurrent, and thermal shutdown to protect the device during abnormal operating conditions.

    Applications:

    1. Motor Control: The high voltage and current ratings make the STD2NK90ZT4 suitable for controlling motors in applications like industrial machinery and robotics.
    2. Power Supplies: It can be used in power supply circuits, particularly in switch-mode power supplies (SMPS) where high voltage and fast switching are required.
    3. Inverters: The device is suitable for use in inverter circuits, such as those used in renewable energy systems like solar panels or in uninterruptible power supplies (UPS).
    4. Battery Management: It can be used in battery management systems for electric vehicles (EVs) or energy storage systems to manage high-voltage battery charging and discharging.
    5. Industrial Control: The MOSFET can be used in various industrial control applications, such as in drive systems and process control circuits.

    Please note that the specific features and applications can vary, and it is essential to refer to the datasheet provided by STMicroelectronics for detailed information on the STD2NK90ZT4, including absolute maximum ratings, electrical characteristics, thermal resistance, and more.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STD2NK90ZT4 Documents

    Download datasheets and manufacturer documentation for STD2NK90ZT4

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