STMicroelectronics_STL11N3LLH6

STMicroelectronics
STL11N3LLH6  
Single FETs, MOSFETs

STMicroelectronics
STL11N3LLH6
278-STL11N3LLH6
Ersa
STMicroelectronics-STL11N3LLH6-datasheets-7903297.pdf
MOSFET N-CH 30V 11A POWERFLAT
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STL11N3LLH6 Description

STL11N3LLH6 Description

The STL11N3LLH6 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high efficiency and reliability. With a DeepGATE™, STripFET™ VI series, this MOSFET offers superior performance in terms of power dissipation, drain current, and gate charge.

STL11N3LLH6 Features

  • Technology: MOSFET (Metal Oxide) - Utilizes advanced technology for optimal performance and reliability.
  • Input Capacitance (Ciss): 1690 pF @ 24 V - Ensures fast switching and minimal power loss.
  • Gate Charge (Qg): 17 nC @ 4.5 V - Reduces switching losses and improves efficiency.
  • Drain to Source Voltage (Vdss): 30 V - Suitable for high-voltage applications.
  • Power Dissipation: 2W (Ta), 50W (Tc) - Capable of handling high power loads.
  • Rds On (Max): 7.5mOhm @ 5.5A, 10V - Offers low on-resistance for minimal power dissipation.
  • Vgs (Max): ±20V - Provides a wide voltage range for compatibility with various systems.
  • Current - Continuous Drain (Id): 11A (Tc) @ 25°C - Capable of high continuous drain current.
  • Mounting Type: Surface Mount - Ideal for compact and space-constrained applications.
  • RoHS Status: ROHS3 Compliant - Ensures environmental compliance and sustainability.
  • REACH Status: REACH Unaffected - Compliant with European Union regulations.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for a wide range of environmental conditions.

STL11N3LLH6 Applications

The STL11N3LLH6 is ideal for applications that require high efficiency, reliability, and performance in power management and control. Some specific use cases include:

  • Power Supplies: High-efficiency power conversion and regulation.
  • Motor Controls: Reliable and efficient motor drive and control.
  • Automotive Applications: Power management and control in various automotive systems.
  • Industrial Controls: High-performance control in industrial automation and process control systems.

Conclusion of STL11N3LLH6

The STL11N3LLH6 from STMicroelectronics is a high-performance N-Channel MOSFET that offers superior technical specifications and performance benefits. Its unique features, such as low gate charge, high drain current, and wide voltage range, make it an ideal choice for applications requiring high efficiency and reliability. With its compliance with environmental regulations and suitability for various environmental conditions, the STL11N3LLH6 is a reliable and efficient solution for power management and control in a wide range of applications.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
PCB changed
HTS
FET Type
ECCN (US)
Supplier Device Package
Qg - Gate Charge
Power Dissipation (Max)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL11N3LLH6 Documents

Download datasheets and manufacturer documentation for STL11N3LLH6

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