STMicroelectronics

STD80N6F6  

Single FETs, MOSFETs

The STD80N6F6 is a high-power, high-voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The STD80N6F6 is a surface-mount MOSFET transistor with a drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 8A. It has a low on-state resistance (RDS(on)) of 0.65 ohms maximum, which helps to minimize power dissipation and improve efficiency. The device also features a fast switching speed and low gate charge, which makes it suitable for use in high-frequency applications.

Features:

• N-channel MOSFET transistor
• Drain-source voltage (VDS) of 600V
• Continuous drain current (ID) of 8A
• Low on-state resistance (RDS(on)) of 0.65 ohms maximum
• Fast switching speed and low gate charge
• Surface-mount package

Applications:

The STD80N6F6 is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Energy management systems
• Industrial control systems
• Automotive applications
• Switch mode power supplies (SMPS)
• Inverters
• Battery management systems
• DC-DC converters
  In summary, the STD80N6F6 is a high-power, high-voltage N-channel MOSFET transistor that is designed for use in a variety of power electronic applications. Its low on-state resistance and fast switching speed make it an ideal choice for high-frequency applications, while its high voltage and current ratings make it suitable for use in motor control and power supply applications.

STD80N6F6 Documents

Download datasheets and manufacturer documentation for STD80N6F6

Datasheets :

STD80N6F6      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

HTML Datasheet :

STD80N6F6