STMicroelectronics

STP80N6F6

STP80N6F6 Description

The STP80N6F6 from STMicroelectronics is a high-performance N-channel 60V, 110A power MOSFET housed in a TO-220 package. Designed for demanding automotive and industrial applications, it leverages DeepGATE™ and STripFET™ VI technologies to deliver ultra-low on-resistance (Rds(on)) of 5.8mΩ at 10V gate drive, ensuring minimal conduction losses. With a maximum power dissipation of 120W (Tc), this MOSFET excels in high-current switching scenarios. Although marked as obsolete, its robust specifications—including a gate charge (Qg) of 122nC and input capacitance (Ciss) of 7480pF—make it a reliable choice for legacy designs requiring high efficiency and thermal stability.

STP80N6F6 Features

• Low Rds(on): 5.8mΩ @ 50A, 10V reduces power loss in high-current applications.
• High Current Handling: 110A continuous drain current (Tc) supports heavy-load conditions.
• Automotive Grade: Compliant with stringent automotive reliability standards.
• Fast Switching: Optimized gate charge (122nC @ 10V) and capacitance for efficient high-frequency operation.
• Robust Protection: ±20V gate-source voltage (Vgs) tolerance enhances durability against voltage spikes.
• Thermal Performance: 120W max power dissipation ensures stability under thermal stress.

STP80N6F6 Applications

• Automotive Systems: Ideal for ECUs, motor drives, and LED lighting due to its high current and thermal resilience.
• Power Supplies: Suited for DC-DC converters and SMPS where low Rds(on) minimizes energy loss.
• Industrial Motor Control: Effective in H-bridge configurations and inverters for brushed/brushless motors.
• Battery Management: Used in high-current discharge circuits and protection modules for Li-ion packs.

Conclusion of STP80N6F6

The STP80N6F6 remains a competitive choice for high-power applications despite its obsolete status, offering low conduction losses, high current capability, and automotive-grade reliability. Its TO-220 package and STripFET™ VI technology make it particularly valuable for legacy systems requiring efficient power switching. Engineers should consider this MOSFET for retrofits or designs prioritizing proven performance over availability.