The STP80N6F6 from STMicroelectronics is a high-performance N-channel 60V, 110A power MOSFET housed in a TO-220 package. Designed for demanding automotive and industrial applications, it leverages DeepGATE™ and STripFET™ VI technologies to deliver ultra-low on-resistance (Rds(on)) of 5.8mΩ at 10V gate drive, ensuring minimal conduction losses. With a maximum power dissipation of 120W (Tc), this MOSFET excels in high-current switching scenarios. Although marked as obsolete, its robust specifications—including a gate charge (Qg) of 122nC and input capacitance (Ciss) of 7480pF—make it a reliable choice for legacy designs requiring high efficiency and thermal stability.
The STP80N6F6 remains a competitive choice for high-power applications despite its obsolete status, offering low conduction losses, high current capability, and automotive-grade reliability. Its TO-220 package and STripFET™ VI technology make it particularly valuable for legacy systems requiring efficient power switching. Engineers should consider this MOSFET for retrofits or designs prioritizing proven performance over availability.
Download datasheets and manufacturer documentation for STP80N6F6