STMicroelectronics_STP80N6F6

STMicroelectronics
STP80N6F6  
Single FETs, MOSFETs

STMicroelectronics
STP80N6F6
278-STP80N6F6
MOSFET N-CH 60V 110A TO220
In Stock : 1197

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STP80N6F6 Description

STP80N6F6 Description

The STP80N6F6 from STMicroelectronics is a high-performance N-channel 60V, 110A power MOSFET housed in a TO-220 package. Designed for demanding automotive and industrial applications, it leverages DeepGATE™ and STripFET™ VI technologies to deliver ultra-low on-resistance (Rds(on)) of 5.8mΩ at 10V gate drive, ensuring minimal conduction losses. With a maximum power dissipation of 120W (Tc), this MOSFET excels in high-current switching scenarios. Although marked as obsolete, its robust specifications—including a gate charge (Qg) of 122nC and input capacitance (Ciss) of 7480pF—make it a reliable choice for legacy designs requiring high efficiency and thermal stability.

STP80N6F6 Features

  • Low Rds(on): 5.8mΩ @ 50A, 10V reduces power loss in high-current applications.
  • High Current Handling: 110A continuous drain current (Tc) supports heavy-load conditions.
  • Automotive Grade: Compliant with stringent automotive reliability standards.
  • Fast Switching: Optimized gate charge (122nC @ 10V) and capacitance for efficient high-frequency operation.
  • Robust Protection: ±20V gate-source voltage (Vgs) tolerance enhances durability against voltage spikes.
  • Thermal Performance: 120W max power dissipation ensures stability under thermal stress.

STP80N6F6 Applications

  • Automotive Systems: Ideal for ECUs, motor drives, and LED lighting due to its high current and thermal resilience.
  • Power Supplies: Suited for DC-DC converters and SMPS where low Rds(on) minimizes energy loss.
  • Industrial Motor Control: Effective in H-bridge configurations and inverters for brushed/brushless motors.
  • Battery Management: Used in high-current discharge circuits and protection modules for Li-ion packs.

Conclusion of STP80N6F6

The STP80N6F6 remains a competitive choice for high-power applications despite its obsolete status, offering low conduction losses, high current capability, and automotive-grade reliability. Its TO-220 package and STripFET™ VI technology make it particularly valuable for legacy systems requiring efficient power switching. Engineers should consider this MOSFET for retrofits or designs prioritizing proven performance over availability.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Qualification
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Maximum Gate Source Leakage Current (nA)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Maximum IDSS (uA)
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Supplier Temperature Grade
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)

STP80N6F6 Documents

Download datasheets and manufacturer documentation for STP80N6F6

Shopping Guide

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