STMicroelectronics_STW45N60DM2AG

STMicroelectronics
STW45N60DM2AG  
Single FETs, MOSFETs

STMicroelectronics
STW45N60DM2AG
278-STW45N60DM2AG
Ersa
STMicroelectronics-STW45N60DM2AG-datasheets-7575858.pdf
MOSFET N-CH 600V 34A TO247
In Stock : 544

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STW45N60DM2AG Description

STW45N60DM2AG Description

The STW45N60DM2AG is a high-performance N-Channel MOSFET from STMicroelectronics, designed for automotive applications. It features a 600V drain-to-source voltage rating and a continuous drain current of 34A at 25°C, making it suitable for a wide range of power electronics applications. The device is manufactured using advanced MOSFET technology, ensuring high efficiency and reliability.

STW45N60DM2AG Features

  • 600V Drain-to-Source Voltage (Vdss): Provides robust voltage handling capabilities for various power electronics applications.
  • 34A Continuous Drain Current (Id) @ 25°C: Delivers high current capacity for demanding power management tasks.
  • 93mOhm Rds On (Max) @ 17A, 10V: Offers low on-resistance for efficient power dissipation.
  • 5V Vgs(th) (Max) @ 250µA: Ensures low gate drive voltage requirements for ease of use in various circuits.
  • 2500 pF Input Capacitance (Ciss) (Max) @ 100 V: Minimizes parasitic effects and improves high-frequency performance.
  • 56 nC Gate Charge (Qg) (Max) @ 10 V: Reduces switching losses and improves efficiency.
  • ±25V Vgs (Max): Allows for a wide range of gate voltage compatibility.
  • 250W Power Dissipation (Max): Enables high power handling capabilities.
  • Automotive Grade: Designed to meet the stringent requirements of automotive applications.
  • Through Hole Mounting Type: Facilitates easy integration into existing designs.

STW45N60DM2AG Applications

The STW45N60DM2AG is ideal for a variety of high-power, high-voltage applications in the automotive sector, including:

  • Battery Management Systems: Manages power flow between the battery and various vehicle systems.
  • DC-DC Converters: Converts voltage levels for efficient power distribution.
  • Motor Controls: Drives electric motors in electric and hybrid vehicles.
  • Power Supplies: Provides stable power to various automotive electronics.

Conclusion of STW45N60DM2AG

The STW45N60DM2AG from STMicroelectronics is a powerful, reliable N-Channel MOSFET designed for demanding automotive applications. Its high voltage and current ratings, combined with low on-resistance and gate charge, make it an excellent choice for power electronics designs. With its automotive-grade rating and through-hole mounting, the STW45N60DM2AG is a versatile solution for a wide range of high-power applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STW45N60DM2AG Documents

Download datasheets and manufacturer documentation for STW45N60DM2AG

Ersa Mult Dev Assembly Chg 19/Dec/2018      
Ersa STW45N60DM2AG      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW45N60DM2AG      

Shopping Guide

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