STMicroelectronics_STB45N50DM2AG

STMicroelectronics
STB45N50DM2AG  
Single FETs, MOSFETs

STMicroelectronics
STB45N50DM2AG
278-STB45N50DM2AG
Ersa
STMicroelectronics-STB45N50DM2AG-datasheets-2757382.pdf
MOSFET N-CH 500V 35A D2PAK
In Stock : 994

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STB45N50DM2AG Description

STB45N50DM2AG Description

The STB45N50DM2AG is a high-performance N-channel MOSFET from STMicroelectronics, designed for automotive applications. This device is part of the MDmesh™ DM2 series and offers exceptional performance in terms of power dissipation, voltage handling, and current capacity. With a drain-to-source voltage (Vdss) of 500V, it can handle high-voltage applications with ease. The device is surface-mountable, making it ideal for compact designs and high-density packaging.

STB45N50DM2AG Features

  • High Drain-to-Source Voltage (Vdss): 500V, suitable for high-voltage applications.
  • Power Dissipation (Max): 250W (Tc), ensuring efficient heat management.
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc), providing high current capacity.
  • Low Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V, contributing to low power loss.
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10V, enabling fast switching.
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V, reducing parasitic effects.
  • Vgs (Max): ±25V, providing robust gate voltage handling.
  • Technology: MOSFET (Metal Oxide), ensuring reliability and longevity.
  • Mounting Type: Surface Mount, suitable for compact and high-density designs.

STB45N50DM2AG Applications

The STB45N50DM2AG is ideal for a variety of high-voltage and high-current applications in the automotive industry. Some specific use cases include:

  • Power Management Systems: Due to its high power dissipation and current capacity, it is suitable for managing power in vehicles.
  • Battery Management Systems: The device's high voltage and current ratings make it ideal for managing battery charging and discharging.
  • Electric Vehicle (EV) Components: Its high voltage and current ratings, along with its automotive-grade design, make it suitable for EV components such as motor controllers and inverters.

Conclusion of STB45N50DM2AG

The STB45N50DM2AG is a powerful and reliable MOSFET designed for high-voltage and high-current automotive applications. Its unique combination of high Vdss, low Rds On, and high Id, along with its automotive-grade features, make it an excellent choice for demanding applications where performance and reliability are critical. With its robust design and compliance with industry standards, the STB45N50DM2AG stands out as a top choice for engineers looking to push the boundaries of automotive electronics.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STB45N50DM2AG Documents

Download datasheets and manufacturer documentation for STB45N50DM2AG

Ersa Product Change Notification 2024-03-05 (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service