STMicroelectronics_STD10NF10T4

STMicroelectronics
STD10NF10T4  
Single FETs, MOSFETs

STMicroelectronics
STD10NF10T4
278-STD10NF10T4
MOSFET N-CH 100V 13A DPAK
In Stock : 3378

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    STD10NF10T4 Description

    The STD10NF10T4 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including high voltage switching and motor control.

    Description:

    The STD10NF10T4 is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-to-source voltage (Vds) of 1000V and a continuous drain current (Id) of 10A. It features a low on-state resistance (Rds(on)) of 4.5 milliohms and a fast switching speed.

    Features:

    • High voltage operation: The STD10NF10T4 is designed to operate at high voltages, making it suitable for use in applications that require high voltage switching.
    • High current capability: With a continuous drain current of 10A, the STD10NF10T4 is capable of handling high current loads.
    • Low on-state resistance: The low on-state resistance of the STD10NF10T4 allows for efficient power switching with minimal power loss.
    • Fast switching speed: The STD10NF10T4 has a fast switching speed, making it suitable for use in applications that require rapid switching.

    Applications:

    The STD10NF10T4 is suitable for use in a variety of applications, including:

    • High voltage switching: The high voltage rating of the STD10NF10T4 makes it suitable for use in high voltage switching applications, such as power supplies and motor controllers.
    • Motor control: The high current capability and fast switching speed of the STD10NF10T4 make it well-suited for use in motor control applications, such as HVAC systems and industrial machinery.
    • Power supplies: The STD10NF10T4 can be used in power supply applications, such as battery chargers and power adapters.

    Overall, the STD10NF10T4 is a versatile MOSFET transistor that is well-suited for use in a variety of high voltage and high current applications. Its low on-state resistance and fast switching speed make it an efficient and reliable choice for power switching and motor control applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STD10NF10T4 Documents

    Download datasheets and manufacturer documentation for STD10NF10T4

    Ersa Mult Dev Assembly Chg 18/Oct/2019      
    Ersa STD10NF10T4      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STB100NF04 View All Specifications      
    Ersa STD10NF10T4      

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