The STB75NF75T4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. This device is part of the STripFET™ II series, known for its superior performance and reliability. With a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) of 80A at 25°C, the STB75NF75T4 is capable of handling demanding power electronic applications.
STB75NF75T4 Features
High Voltage and Current Ratings: The STB75NF75T4 boasts a drain-to-source voltage of 75V and can handle a continuous drain current of 80A at 25°C, making it suitable for high-power applications.
Low On-Resistance: With a maximum on-resistance (Rds On) of 11mΩ at 40A and 10V, this MOSFET offers efficient power dissipation, reducing power losses and improving overall efficiency.
Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable operation across a wide range of gate drive conditions.
Low Gate Charge: The maximum gate charge (Qg) is 160nC at 10V, contributing to faster switching speeds and lower switching losses.
Surface Mount Packaging: The D2PAK package allows for easy integration into surface-mount applications, providing a compact and efficient solution for space-constrained designs.
Compliance and Certifications: The STB75NF75T4 is compliant with RoHS3 and REACH regulations, ensuring environmental and safety standards are met.
STB75NF75T4 Applications
The STB75NF75T4 is ideal for a variety of applications where high power handling and efficient switching are critical:
Power Supplies: Due to its high voltage and current ratings, the STB75NF75T4 is well-suited for power supply designs, particularly in applications requiring high efficiency and low power losses.
Motor Controls: The low on-resistance and robust gate drive make this MOSFET an excellent choice for motor control applications, where precise control and high power handling are necessary.
Automotive Electronics: The STB75NF75T4's ability to handle high voltages and currents, combined with its robustness, makes it suitable for automotive applications, such as electric vehicle chargers and power management systems.
Conclusion of STB75NF75T4
The STB75NF75T4 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, designed to meet the demands of high-power applications. Its combination of high voltage and current ratings, low on-resistance, and compliance with environmental and safety standards make it an excellent choice for power supplies, motor controls, and automotive electronics. The STB75NF75T4's performance benefits and unique features set it apart from similar models, making it a reliable and efficient solution for demanding power electronic applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STB75NF75T4 Documents
Download datasheets and manufacturer documentation for STB75NF75T4
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Shipping Rate
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