STMicroelectronics_STL7N6F7

STMicroelectronics
STL7N6F7  
Single FETs, MOSFETs

STMicroelectronics
STL7N6F7
278-STL7N6F7
Ersa
STMicroelectronics-STL7N6F7-datasheets-149187.pdf
MOSFET N-CH 60V 7A POWERFLAT
In Stock : 17006

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STL7N6F7 Description

STL7N6F7 Description

The STL7N6F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring efficient power management and control. It features a 60V drain-to-source voltage rating and can handle continuous drain currents up to 7A at 25°C. The device is housed in a compact PowerFlat™ (2x2) package, making it ideal for space-constrained applications.

STL7N6F7 Features

  • Technical Specifications:

    • Input Capacitance (Ciss): 450 pF @ 25 V
    • Gate Charge (Qg): 8 nC @ 10 V
    • Drain to Source Voltage (Vdss): 60 V
    • Power Dissipation (Max): 2.4W (Ta)
    • Technology: MOSFET (Metal Oxide)
    • Vgs (Max): ±20V
    • Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
    • Vgs(th) (Max) @ Id: 4V @ 250µA
    • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
    • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Performance Benefits:

    • Low Rds On (25mOhm) for high efficiency
    • Low gate charge (8 nC) for fast switching
    • Robust 60V drain-to-source voltage rating
  • Unique Features and Advantages:

    • STripFET™ series for improved performance and reliability
    • REACH Unaffected and ROHS3 Compliant for environmental compliance
    • Moisture Sensitivity Level (MSL) 1 for unlimited storage time

STL7N6F7 Applications

The STL7N6F7 is ideal for a variety of applications where efficient power management and control are critical:

  • Power Management: In power supply designs, battery management systems, and motor control applications, the STL7N6F7's low Rds On and high drain current capabilities ensure efficient power delivery and control.

  • Automotive Applications: The device's robust voltage rating and low gate charge make it suitable for automotive applications such as electric vehicle (EV) charging systems and in-vehicle power management.

  • Industrial Control: In industrial control systems, the STL7N6F7 can be used for motor drives, power conversion, and other high-power applications where reliability and efficiency are paramount.

Conclusion of STL7N6F7

The STL7N6F7 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET designed for demanding power management applications. Its unique combination of low Rds On, high drain current, and robust voltage rating make it an excellent choice for power supply designs, automotive systems, and industrial control applications. With its REACH Unaffected and ROHS3 Compliant status, the STL7N6F7 is also an environmentally responsible choice for your next project.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL7N6F7 Documents

Download datasheets and manufacturer documentation for STL7N6F7

Ersa Product Change Notification 2024-05-20 (PDF)       Product Change Notification (PDF)      

Shopping Guide

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