STMicroelectronics_STP25NM60N

STMicroelectronics
STP25NM60N  
Single FETs, MOSFETs

STMicroelectronics
STP25NM60N
278-STP25NM60N
MOSFET N-CH 600V 21A TO220AB
In Stock : 5538

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STP25NM60N Description

STP25NM60N Description

The STP25NM60N from STMicroelectronics is a 600V N-channel MOSFET belonging to the MDmesh™ II series, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 21A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 160mΩ (at 10.5A, 10V gate drive), this device offers excellent conduction losses and thermal performance. Its 600V drain-to-source voltage (Vdss) rating makes it suitable for high-voltage circuits, while the ±25V gate-source voltage (Vgs) ensures robust gate control. The TO-220AB through-hole package provides mechanical durability and efficient heat dissipation, supporting a maximum power dissipation of 160W (at Tc).

STP25NM60N Features

  • Advanced MDmesh™ II Technology: Optimized for reduced switching losses and improved efficiency in high-frequency applications.
  • Low Gate Charge (Qg): 84nC at 10V minimizes drive requirements, enhancing switching speed and reducing power loss.
  • High Input Capacitance (Ciss): 2400pF at 50V ensures stable operation under varying load conditions.
  • Wide Operating Temperature Range: Up to 150°C (TJ) for reliable performance in demanding environments.
  • RoHS3 & REACH Compliant: Environmentally friendly and suitable for modern regulatory standards.
  • High Voltage Tolerance: 600V Vdss makes it ideal for industrial and automotive applications.

STP25NM60N Applications

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and offline power supplies.
  • Motor Control: Efficient driving of inductive loads in industrial and automotive systems.
  • Lighting Solutions: LED drivers and ballast control circuits.
  • Renewable Energy Systems: Inverters for solar and wind power applications.
  • Industrial Automation: High-power switching in PLCs and motor drives.

Conclusion of STP25NM60N

The STP25NM60N is a high-performance 600V N-channel MOSFET optimized for power efficiency and thermal management. Its low Rds(on), high voltage rating, and MDmesh™ II technology make it superior to standard MOSFETs in high-frequency switching applications. Though marked as obsolete, it remains a reliable choice for legacy designs requiring robust power handling. Ideal for SMPS, motor drives, and renewable energy systems, this device balances performance, durability, and compliance with modern environmental standards. Engineers seeking a proven high-voltage MOSFET for industrial or automotive applications will find the STP25NM60N a dependable solution.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STP25NM60N Documents

Download datasheets and manufacturer documentation for STP25NM60N

Ersa STx25NM60N(-1)      
Ersa STx25NM60N(-1)      

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