The STP25NM60N from STMicroelectronics is a 600V N-channel MOSFET belonging to the MDmesh™ II series, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 21A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 160mΩ (at 10.5A, 10V gate drive), this device offers excellent conduction losses and thermal performance. Its 600V drain-to-source voltage (Vdss) rating makes it suitable for high-voltage circuits, while the ±25V gate-source voltage (Vgs) ensures robust gate control. The TO-220AB through-hole package provides mechanical durability and efficient heat dissipation, supporting a maximum power dissipation of 160W (at Tc).
The STP25NM60N is a high-performance 600V N-channel MOSFET optimized for power efficiency and thermal management. Its low Rds(on), high voltage rating, and MDmesh™ II technology make it superior to standard MOSFETs in high-frequency switching applications. Though marked as obsolete, it remains a reliable choice for legacy designs requiring robust power handling. Ideal for SMPS, motor drives, and renewable energy systems, this device balances performance, durability, and compliance with modern environmental standards. Engineers seeking a proven high-voltage MOSFET for industrial or automotive applications will find the STP25NM60N a dependable solution.
Download datasheets and manufacturer documentation for STP25NM60N