STMicroelectronics' STL40N10F7 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a variety of applications, including motor control, power supplies, and automotive systems. Here's a brief description of the STL40N10F7, its features, and potential applications:
Description:
The STL40N10F7 is an N-channel enhancement mode MOSFET with a high cell density, which allows for a compact design while maintaining high power capabilities. It is manufactured using ST's advanced processing technology, ensuring high performance and reliability.
Features:
High Power Density: The device is designed to operate at high power levels, making it suitable for applications requiring significant current and voltage handling capabilities.
Enhancement Mode Operation: As an enhancement mode MOSFET, it requires a positive gate-to-source voltage to turn on, which can simplify the design of the control circuitry.
High Input Impedance: The high input impedance of the MOSFET means that it draws very little current from the driving circuit, reducing power consumption and making it more energy-efficient.
Robustness: The device is designed to be robust against electrical transients and can withstand high voltage spikes, making it suitable for use in harsh environments.
Low On-State Resistance (RDS(on)): The low on-state resistance reduces power dissipation and improves efficiency when the MOSFET is conducting current.
High-Temperature Operation: The STL40N10F7 is rated for operation over a wide temperature range, making it suitable for applications that require high-temperature stability.
Applications:
Motor Control: The high power handling capability makes it ideal for use in motor drive circuits, where it can control the speed and direction of electric motors.
Power Supplies: In switch-mode power supplies (SMPS), the MOSFET can be used as a high-efficiency switch to regulate the flow of power.
Automotive Systems: The robustness and high-temperature operation make it suitable for use in automotive applications, such as engine control units, power steering systems, and battery management systems.
Industrial Control: In industrial settings, the STL40N10F7 can be used in various control circuits for managing power to actuators, pumps, and other machinery.
Battery Protection: In battery-powered systems, the MOSFET can be used to protect against overcurrent and short-circuit conditions.
When using the STL40N10F7 or any other MOSFET, it is crucial to follow the manufacturer's guidelines and ensure that the device is appropriately selected and protected for the specific application. This includes considering factors such as the maximum voltage, current, and power dissipation, as well as the thermal management and protection against electrostatic discharge (ESD).
Tech Specifications
Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Channel Mode
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STL40N10F7 Documents
Download datasheets and manufacturer documentation for STL40N10F7
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