STMicroelectronics_STL40N10F7

STMicroelectronics
STL40N10F7  
Single FETs, MOSFETs

STMicroelectronics
STL40N10F7
278-STL40N10F7
Ersa
STMicroelectronics-STL40N10F7-datasheets-81279.pdf
MOSFET N-CH 100V 40A POWERFLAT
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    STL40N10F7 Description

    STMicroelectronics' STL40N10F7 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a variety of applications, including motor control, power supplies, and automotive systems. Here's a brief description of the STL40N10F7, its features, and potential applications:

    Description:

    The STL40N10F7 is an N-channel enhancement mode MOSFET with a high cell density, which allows for a compact design while maintaining high power capabilities. It is manufactured using ST's advanced processing technology, ensuring high performance and reliability.

    Features:

    1. High Power Density: The device is designed to operate at high power levels, making it suitable for applications requiring significant current and voltage handling capabilities.
    2. Enhancement Mode Operation: As an enhancement mode MOSFET, it requires a positive gate-to-source voltage to turn on, which can simplify the design of the control circuitry.
    3. High Input Impedance: The high input impedance of the MOSFET means that it draws very little current from the driving circuit, reducing power consumption and making it more energy-efficient.
    4. Robustness: The device is designed to be robust against electrical transients and can withstand high voltage spikes, making it suitable for use in harsh environments.
    5. Low On-State Resistance (RDS(on)): The low on-state resistance reduces power dissipation and improves efficiency when the MOSFET is conducting current.
    6. High-Temperature Operation: The STL40N10F7 is rated for operation over a wide temperature range, making it suitable for applications that require high-temperature stability.

    Applications:

    1. Motor Control: The high power handling capability makes it ideal for use in motor drive circuits, where it can control the speed and direction of electric motors.
    2. Power Supplies: In switch-mode power supplies (SMPS), the MOSFET can be used as a high-efficiency switch to regulate the flow of power.
    3. Automotive Systems: The robustness and high-temperature operation make it suitable for use in automotive applications, such as engine control units, power steering systems, and battery management systems.
    4. Industrial Control: In industrial settings, the STL40N10F7 can be used in various control circuits for managing power to actuators, pumps, and other machinery.
    5. Battery Protection: In battery-powered systems, the MOSFET can be used to protect against overcurrent and short-circuit conditions.

    When using the STL40N10F7 or any other MOSFET, it is crucial to follow the manufacturer's guidelines and ensure that the device is appropriately selected and protected for the specific application. This includes considering factors such as the maximum voltage, current, and power dissipation, as well as the thermal management and protection against electrostatic discharge (ESD).

    Tech Specifications

    Unit Weight
    Configuration
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STL40N10F7 Documents

    Download datasheets and manufacturer documentation for STL40N10F7

    Ersa STL40N10F7      
    Ersa STL40N10F7      

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