The STP15N65M5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power electronics applications. Built using MDmesh™ V technology, it offers an optimal balance of low on-resistance (340mΩ @ 10V, 5.5A) and high breakdown voltage (650V), making it ideal for high-efficiency switching. With a continuous drain current (Id) of 11A (Tc) and a power dissipation of 125W (Tc), this device excels in high-power environments. The TO-220 package ensures robust thermal performance, while its low gate charge (22nC @ 10V) and input capacitance (810pF @ 100V) minimize switching losses, enhancing efficiency in high-frequency circuits.
The STP15N65M5 stands out as a high-efficiency 650V MOSFET with superior switching performance, low conduction losses, and excellent thermal characteristics. Its MDmesh™ V technology ensures reliability in demanding environments, while the TO-220 package simplifies heat dissipation. Ideal for SMPS, motor drives, and renewable energy systems, this MOSFET combines high power density with low switching losses, making it a top choice for engineers seeking performance and durability.
Download datasheets and manufacturer documentation for STP15N65M5