STMicroelectronics

STB34N65M5  

Single FETs, MOSFETs

STB34N65M5 Description

The STB34N65M5 from STMicroelectronics is a high-performance N-channel 650V MOSFET belonging to the MDmesh™ V series, optimized for efficiency and robustness in power electronics. Designed for surface-mount (D2PAK) applications, it features a low on-resistance (Rds(on)) of 110mΩ at 10V gate drive, enabling minimal conduction losses. With a continuous drain current (Id) of 28A (Tc) and a power dissipation capability of 190W, this MOSFET excels in high-voltage, high-current environments. Its fast switching characteristics, supported by a gate charge (Qg) of 62.5nC and input capacitance (Ciss) of 2700pF, ensure efficient operation in switching power supplies and motor drives. The device is RoHS3 compliant and REACH unaffected, meeting stringent environmental standards.

STB34N65M5 Features

• High Voltage Rating: 650V Vdss for reliable operation in demanding power circuits.
• Low Rds(on): 110mΩ @ 10V Vgs, reducing conduction losses and improving thermal performance.
• Fast Switching: Optimized Qg (62.5nC) and Ciss (2700pF) for high-frequency applications.
• Robust Thermal Handling: 190W power dissipation and 150°C junction temperature (TJ) rating.
• Wide Gate Drive Range: ±25V Vgs(max) for flexibility in gate driving circuits.
• Advanced MDmesh™ V Technology: Enhances efficiency with lower switching losses compared to standard MOSFETs.
• Surface-Mount D2PAK Package: Ideal for automated assembly and compact designs.

STB34N65M5 Applications

• Switched-Mode Power Supplies (SMPS): High-efficiency AC/DC and DC/DC converters.
• Motor Drives & Inverters: Suitable for industrial motor control and servo systems.
• Solar Inverters & Energy Storage: Optimized for renewable energy applications.
• LED Lighting Drivers: High-voltage operation for constant-current LED drivers.
• Industrial Power Systems: Reliable performance in welding equipment and UPS systems.

Conclusion of STB34N65M5

The STB34N65M5 stands out as a high-efficiency, high-voltage MOSFET with superior thermal and electrical characteristics, making it ideal for power conversion and motor control applications. Its low Rds(on), fast switching, and MDmesh™ V technology provide a competitive edge over conventional MOSFETs, ensuring reduced losses and improved system reliability. Whether in industrial, renewable energy, or consumer electronics, this device delivers exceptional performance in demanding environments.

STB34N65M5 Documents

Download datasheets and manufacturer documentation for STB34N65M5

Datasheets :

STB,I,P,W34N65M5      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

Other Related Documents :

STB34N65M5 View All Specifications      

HTML Datasheet :

STB,I,P,W34N65M5      

PCN Design/Specification :

IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013