STMicroelectronics

STB155N3LH6  

Single FETs, MOSFETs

STB155N3LH6 Description

The STB155N3LH6 is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage of 30V and a continuous drain current of 80A at 25°C, this device is well-suited for a wide range of power electronics applications. The STB155N3LH6 features a DeepGATE™ and STripFET™ VI technology, which provides improved gate control and reduced on-resistance, resulting in superior performance and energy efficiency.

STB155N3LH6 Features

• High Drain-to-Source Voltage (Vdss): 30V, allowing for operation in high-voltage applications.
• Continuous Drain Current (Id): 80A at 25°C, ensuring robust power handling capabilities.
• Low On-Resistance (Rds On): 3mOhm at 40A and 10V, contributing to high efficiency and reduced power loss.
• DeepGATE™ and STripFET™ VI Technology: Enhanced gate control and reduced on-resistance for improved performance.
• Low Gate Threshold Voltage (Vgs(th)): 2.5V at 250µA, facilitating easy gate drive and control.
• Surface Mount Packaging:。
• Compliance with Industry Standards: RoHS3 compliant, REACH unaffected, and moisture sensitivity level 1, ensuring environmental and regulatory compliance.

STB155N3LH6 Applications

The STB155N3LH6 is ideal for applications where high power handling and efficient switching are critical. Some specific use cases include:

• Power Supplies: Utilized in the design of high-efficiency power supplies for consumer electronics and industrial equipment.
• Motor Controls: Employed in motor control applications for electric vehicles, industrial machinery, and robotics.
• Renewable Energy Systems: Integrated into solar inverters and wind power converters for clean energy generation.
• Industrial Automation: Used in control systems for manufacturing processes, ensuring reliable and efficient operation.

Conclusion of STB155N3LH6

The STB155N3LH6 from STMicroelectronics is a powerful and efficient N-channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and advanced technology. Its unique features and compliance with industry standards make it an excellent choice for a wide range of power electronics applications, from power supplies to motor controls and renewable energy systems. With its robust performance and reliable operation, the STB155N3LH6 is a valuable component for engineers designing cutting-edge electronic systems.

STB155N3LH6 Documents

Download datasheets and manufacturer documentation for STB155N3LH6

Datasheets :

ST(B,D)155N3LH6      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021      

Other Related Documents :

STB155N3LH6 View All Specifications      

HTML Datasheet :

ST(B,D)155N3LH6      

PCN Design/Specification :

D2PAK Lead Modification 04/Oct/2013