The STL7NM60N is a single N-Channel MOSFET from STMicroelectronics, featuring a drain-to-source voltage of 600V and a continuous drain current of 5.8A at 25°C. This MOSFET is designed for high-power applications and offers excellent performance in terms of power dissipation, with a maximum power dissipation of 68W at the case temperature. The device is mounted on a surface mount package and is available in a tape and reel packaging for automated assembly.
STL7NM60N Features
600V Drain-to-Source Voltage (Vdss): Capable of handling high voltage applications.
5.8A Continuous Drain Current (Id) @ 25°C: Suitable for high current applications.
68W Maximum Power Dissipation (Tc): High power handling capability.
14nC Maximum Gate Charge (Qg) @ 10V: Low gate charge for fast switching.
363pF Maximum Input Capacitance (Ciss) @ 50V: Low input capacitance for high-speed operation.
900mOhm Maximum Rds On @ 2.5A, 10V: Low on-resistance for minimal power loss.
4V Maximum Vgs(th) @ 250µA: Easy to drive with low gate threshold voltage.
±25V Maximum Vgs: Wide gate voltage range for compatibility with various gate drivers.
REACH Unaffected: Compliant with REACH regulations.
ROHS3 Compliant: Environmentally friendly and suitable for green electronics.
Moisture Sensitivity Level (MSL) 1: Unaffected by moisture, suitable for harsh environments.
EAR99 ECCN: Export-controlled product with specific regulatory requirements.
STL7NM60N Applications
The STL7NM60N is ideal for a variety of high-power applications, including:
Power Supplies: Due to its high voltage and current ratings, the STL7NM60N is suitable for power supply designs.
Motor Controls: The device's high current capability makes it suitable for motor control applications.
Industrial Automation: The robustness and high power dissipation of the STL7NM60N make it ideal for industrial automation systems.
Automotive Applications: The device can be used in automotive applications where high voltage and current ratings are required.
Conclusion of STL7NM60N
The STL7NM60N is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage, current, and power dissipation capabilities. Its low gate charge and input capacitance make it suitable for high-speed switching applications, while its wide gate voltage range and low on-resistance contribute to its efficiency. Although the product is now obsolete, it remains a reliable choice for applications requiring high power and performance. The STL7NM60N's compliance with environmental regulations and its robustness in harsh environments further enhance its appeal for a wide range of applications.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
STL7NM60N Documents
Download datasheets and manufacturer documentation for STL7NM60N
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service