STMicroelectronics_STL7NM60N

STMicroelectronics
STL7NM60N  
Single FETs, MOSFETs

STMicroelectronics
STL7NM60N
278-STL7NM60N
Ersa
STMicroelectronics-STL7NM60N-datasheets-6873398.pdf
MOSFET N-CH 600V 5.8A 14PWRFLAT
In Stock : 80005

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STL7NM60N Description

STL7NM60N Description

The STL7NM60N is a single N-Channel MOSFET from STMicroelectronics, featuring a drain-to-source voltage of 600V and a continuous drain current of 5.8A at 25°C. This MOSFET is designed for high-power applications and offers excellent performance in terms of power dissipation, with a maximum power dissipation of 68W at the case temperature. The device is mounted on a surface mount package and is available in a tape and reel packaging for automated assembly.

STL7NM60N Features

  • 600V Drain-to-Source Voltage (Vdss): Capable of handling high voltage applications.
  • 5.8A Continuous Drain Current (Id) @ 25°C: Suitable for high current applications.
  • 68W Maximum Power Dissipation (Tc): High power handling capability.
  • 14nC Maximum Gate Charge (Qg) @ 10V: Low gate charge for fast switching.
  • 363pF Maximum Input Capacitance (Ciss) @ 50V: Low input capacitance for high-speed operation.
  • 900mOhm Maximum Rds On @ 2.5A, 10V: Low on-resistance for minimal power loss.
  • 4V Maximum Vgs(th) @ 250µA: Easy to drive with low gate threshold voltage.
  • ±25V Maximum Vgs: Wide gate voltage range for compatibility with various gate drivers.
  • REACH Unaffected: Compliant with REACH regulations.
  • ROHS3 Compliant: Environmentally friendly and suitable for green electronics.
  • Moisture Sensitivity Level (MSL) 1: Unaffected by moisture, suitable for harsh environments.
  • EAR99 ECCN: Export-controlled product with specific regulatory requirements.

STL7NM60N Applications

The STL7NM60N is ideal for a variety of high-power applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, the STL7NM60N is suitable for power supply designs.
  2. Motor Controls: The device's high current capability makes it suitable for motor control applications.
  3. Industrial Automation: The robustness and high power dissipation of the STL7NM60N make it ideal for industrial automation systems.
  4. Automotive Applications: The device can be used in automotive applications where high voltage and current ratings are required.

Conclusion of STL7NM60N

The STL7NM60N is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage, current, and power dissipation capabilities. Its low gate charge and input capacitance make it suitable for high-speed switching applications, while its wide gate voltage range and low on-resistance contribute to its efficiency. Although the product is now obsolete, it remains a reliable choice for applications requiring high power and performance. The STL7NM60N's compliance with environmental regulations and its robustness in harsh environments further enhance its appeal for a wide range of applications.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STL7NM60N Documents

Download datasheets and manufacturer documentation for STL7NM60N

Ersa STL7NM60N      
Ersa STL7NM60N      

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