STMicroelectronics
STF11NM65N
Single FETs, MOSFETs
STF11NM65N
278-STF11NM65N
STMicroelectronics-STF11NM65N-datasheets-13245965.pdf
MOSFET N-CH 650V 11A TO220FP
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STF11NM65N Description
STF11NM65N Description
The STF11NM65N is a single N-channel MOSFET from STMicroelectronics, designed for high-power applications. It features a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 11A at 25°C. The device is mounted in a through-hole TO220FP package and is compliant with the RoHS3 standard.
STF11NM65N Features
- High Voltage and Current Ratings: The STF11NM65N can handle a maximum drain-to-source voltage of 650V and a continuous drain current of 11A at 25°C, making it suitable for high-power applications.
- Low On-Resistance: The device has a maximum on-resistance (Rds On) of 455mOhm at 5.5A and 10V, ensuring low power dissipation and high efficiency.
- Fast Switching Speed: The STF11NM65N has a maximum threshold voltage (Vgs(th)) of 4V at 250µA, allowing for fast switching and reduced switching losses.
- Robust Package: The TO220FP package provides excellent thermal performance and mechanical stability, making it ideal for high-power applications.
- Compliance with Industry Standards: The device is compliant with the RoHS3 standard and has a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering.
STF11NM65N Applications
The STF11NM65N is ideal for a variety of high-power applications, including:
- Power Supplies: The high voltage and current ratings make it suitable for use in power supply circuits, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
- Motor Control: The device's low on-resistance and fast switching speed make it an excellent choice for motor control applications, such as electric vehicle (EV) motor drives and industrial motor controllers.
- Industrial Automation: The STF11NM65N can be used in various industrial automation applications, such as robotic arms, conveyor systems, and machine tools, where high power and fast switching are required.
- Renewable Energy: The device's high voltage and current ratings make it suitable for use in renewable energy systems, such as solar inverters and wind turbine converters.
Conclusion of STF11NM65N
The STF11NM65N is a high-performance N-channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and fast switching speed. Its robust package and compliance with industry standards make it an ideal choice for a wide range of high-power applications, including power supplies, motor control, industrial automation, and renewable energy systems.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STF11NM65N Documents
Download datasheets and manufacturer documentation for STF11NM65N
STx(x)11NM65N Mult Dev OBS 3/Jul/2020 STx(x)11NM65N Related Parts
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