STMicroelectronics_STW38N65M5

STMicroelectronics
STW38N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW38N65M5
278-STW38N65M5
Ersa
STMicroelectronics-STW38N65M5-datasheets-2135542.pdf
MOSFET N-CH 650V 30A TO247
In Stock : 1585

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STW38N65M5 Description

STW38N65M5 Description

The STW38N65M5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for demanding applications requiring high voltage and current capabilities. This device features a robust 650V drain-to-source voltage rating and can handle continuous drain currents up to 30A at 25°C. With a low on-resistance of 95mOhm at 15A and 10V, the STW38N65M5 offers efficient power management and reduced power losses. Its 3000 pF input capacitance and 71 nC gate charge ensure fast switching speeds and low gate drive requirements.

STW38N65M5 Features

  • High Voltage and Current Ratings: 650V drain-to-source voltage and 30A continuous drain current at 25°C.
  • Low On-Resistance: 95mOhm at 15A and 10V for efficient power management.
  • Fast Switching: 3000 pF input capacitance and 71 nC gate charge for rapid switching and low gate drive requirements.
  • Robust Thermal Performance: 190W power dissipation at 150°C operating temperature.
  • Environmental Compliance: REACH unaffected and RoHS3 compliant.
  • Reliable Moisture Sensitivity: MSL Level 1 for unlimited storage time.
  • Versatile Mounting: Through-hole mounting in a tube package for easy integration.

STW38N65M5 Applications

The STW38N65M5 is ideal for a wide range of high-power applications where high voltage, current, and efficiency are critical. Some specific use cases include:

  1. Industrial Motor Control: Efficiently manage high-power motors in industrial automation systems.
  2. Power Supplies: Provide high-efficiency power conversion in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  3. Renewable Energy Systems: Support high-voltage, high-current applications in solar inverters and wind energy systems.
  4. Automotive Applications: Enable efficient power management in electric and hybrid vehicles, including battery management systems and electric motor drives.

Conclusion of STW38N65M5

The STW38N65M5 from STMicroelectronics is a high-performance N-Channel MOSFET that delivers exceptional voltage and current handling capabilities, making it an ideal choice for demanding high-power applications. Its low on-resistance, fast switching speeds, and robust thermal performance ensure efficient power management and reliable operation in a wide range of environments. With its environmental compliance and versatile mounting options, the STW38N65M5 is a reliable and efficient solution for power electronics designers.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW38N65M5 Documents

Download datasheets and manufacturer documentation for STW38N65M5

Ersa Product / Process Change Notification (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service