STMicroelectronics

STD80N4F6

STMicroelectronics' STD80N4F6 is a high-power, high-voltage N-channel MOSFET designed for use in a wide range of applications, including power electronics, motor control, and automotive systems.

Description:

The STD80N4F6 is an N-channel enhancement mode MOSFET with a drain-source voltage (VDS) of up to 600V, a continuous drain current (ID) of up to 8A, and a gate-source voltage (VGS) of up to 20V. It is available in a TO-220AB package, which is suitable for use in a variety of power electronic systems.

Features:

• High-power, high-voltage N-channel MOSFET
• Drain-source voltage (VDS) of up to 600V
• Continuous drain current (ID) of up to 8A
• Gate-source voltage (VGS) of up to 20V
• Low on-state resistance (RDS(on)) of 4.5 mOhm max
• Fast switching speed
• High temperature operation range (-55°C to +175°C)
• Available in TO-220AB package

Applications:

The STD80N4F6 is suitable for use in a variety of power electronic systems, including:

• Motor control
• Power supplies
• Inverters
• Battery management systems
• Automotive systems
• Industrial control systems

Overall, the STD80N4F6 is a high-power, high-voltage MOSFET that offers excellent performance and reliability in a wide range of applications. Its low on-state resistance, fast switching speed, and high temperature operation range make it an ideal choice for power electronic systems that require high efficiency and high power density.