STMicroelectronics_STW62N65M5

STMicroelectronics
STW62N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW62N65M5
278-STW62N65M5
Ersa
STMicroelectronics-STW62N65M5-datasheets-11126684.pdf
MOSFET N-CH 650V 46A TO247
In Stock : 594

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STW62N65M5 Description

STW62N65M5 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including power electronics, motor control, and switching applications.

Description:

The STW62N65M5 is an N-channel enhancement mode field-effect transistor (FET). It is a three-terminal semiconductor device that uses a gate voltage to control the flow of current between the drain and source terminals. The device has a high voltage rating of 650V and a continuous drain current (ID) of 65A.

Features:

  • N-channel, enhancement mode
  • High voltage rating of 650V
  • Continuous drain current (ID) of 65A
  • Low on-state resistance (RDS(on))
  • Fast switching characteristics
  • High input impedance
  • Suitable for use in power electronics, motor control, and switching applications

Applications:

  • Power electronics
  • Motor control
  • Switching applications
  • Inverters
  • Converters
  • Battery management systems
  • Industrial control systems

The STW62N65M5 is available in a TO-220 package, which is a popular and widely used package for power transistors. It is designed to operate over a wide range of temperatures, making it suitable for use in a variety of environments. The device is also RoHS compliant, making it suitable for use in environmentally friendly applications.

Overall, the STW62N65M5 is a high-performance MOSFET transistor that offers excellent electrical characteristics and is suitable for use in a wide range of applications. Its high voltage rating and fast switching capabilities make it an ideal choice for power electronics and motor control applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STW62N65M5 Documents

Download datasheets and manufacturer documentation for STW62N65M5

Ersa Mult Devices Testing 10/May/2018      
Ersa STW62N65M5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW62N65M5      

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