STMicroelectronics_STB38N65M5

STMicroelectronics
STB38N65M5  
Single FETs, MOSFETs

STMicroelectronics
STB38N65M5
278-STB38N65M5
Ersa
STMicroelectronics-STB38N65M5-datasheets-12419981.pdf
MOSFET N-CH 650V 30A D2PAK
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STB38N65M5 Description

STB38N65M5 Description

The STB38N65M5 is a high-performance MOSFET (Metal Oxide) transistor manufactured by STMicroelectronics. This N-Channel device is designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 30A at 25°C, the STB38N65M5 is well-suited for demanding power electronics applications.

STB38N65M5 Features

  • High Voltage and Current Handling: The STB38N65M5 can handle a maximum drain-to-source voltage of 650V and a continuous drain current of 30A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 95mΩ at 15A and 10V, the STB38N65M5 offers low conduction losses, improving efficiency in power conversion applications.
  • Fast Switching: The device features a maximum gate charge (Qg) of 71nC at 10V and a threshold voltage (Vgs(th)) of 5V at 250µA, enabling fast switching and reducing switching losses.
  • Robust Construction: The STB38N65M5 is designed for high power dissipation, with a maximum power dissipation (Pd) of 190W at the case temperature (Tc).
  • Reliability: The device is compliant with the RoHS3 directive, indicating its use of environmentally friendly materials, and has a moisture sensitivity level (MSL) of 1, allowing for unlimited storage time before reflow soldering.

STB38N65M5 Applications

The STB38N65M5 is ideal for a variety of high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STB38N65M5 is well-suited for use in power supply designs, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Motor Control: The device's fast switching capabilities make it an excellent choice for motor control applications, such as electric vehicles (EVs) and industrial motor drives.
  • Renewable Energy: The STB38N65M5 can be used in solar inverters and wind turbine converters, where high voltage and current handling are critical.

Conclusion of STB38N65M5

The STB38N65M5 from STMicroelectronics is a powerful MOSFET designed for high-voltage and high-current applications. Its combination of low on-resistance, fast switching, and robust construction make it an excellent choice for power electronics, motor control, and renewable energy applications. With its compliance to environmental regulations and unlimited storage time before reflow soldering, the STB38N65M5 offers a reliable and efficient solution for demanding power management tasks.

Tech Specifications

Unit Weight
Configuration
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB38N65M5 Documents

Download datasheets and manufacturer documentation for STB38N65M5

Ersa STx38N65M5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB38N65M5 View All Specifications      
Ersa STx38N65M5      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

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