STMicroelectronics_STP180N4F6

STMicroelectronics
STP180N4F6  
Single FETs, MOSFETs

STMicroelectronics
STP180N4F6
278-STP180N4F6
Ersa
STMicroelectronics-STP180N4F6-datasheets-2810325.pdf
MOSFET N-CHANNEL 40V 120A TO220
In Stock : 228

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STP180N4F6 Description

STP180N4F6 Description

The STP180N4F6 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, belonging to the STripFET™ F6 series. This N-Channel device offers superior technical specifications and performance benefits, making it an ideal choice for various applications in the electronics industry.

STP180N4F6 Features

  • Voltage Rating: The STP180N4F6 boasts a Drain to Source Voltage (Vdss) of 40V, ensuring reliable operation in high-voltage environments.
  • Current Handling: With a continuous drain current (Id) of 120A at 25°C, this MOSFET can handle substantial current loads, making it suitable for demanding applications.
  • Power Dissipation: The device has a maximum power dissipation of 190W at case temperature (Tc), allowing it to operate efficiently in high-power scenarios.
  • Drive Voltage: The STP180N4F6 features a maximum drive voltage (Vgs) of ±20V and a maximum Rds On of 4.5V, ensuring low power consumption and high efficiency.
  • Mounting Type: This device is designed for through-hole mounting, providing a robust and reliable connection in various electronic circuits.
  • Package: The STP180N4F6 comes in a tube package, which is ideal for easy handling and storage.

STP180N4F6 Applications

The STP180N4F6 is well-suited for a wide range of applications, including:

  1. Power Electronics: Due to its high voltage and current ratings, this MOSFET is ideal for power electronics applications such as power supplies, motor controls, and inverters.
  2. Industrial Automation: The STP180N4F6 can be used in industrial automation systems, where high power and reliability are crucial.
  3. Automotive: This MOSFET is suitable for automotive applications, such as electric vehicle charging systems and power management.
  4. Renewable Energy: The STP180N4F6 can be employed in renewable energy systems, like solar inverters and wind power converters, where high efficiency and power handling are essential.

Conclusion of STP180N4F6

The STP180N4F6 from STMicroelectronics is a high-performance N-Channel MOSFET that offers superior technical specifications, making it an excellent choice for various high-power and high-voltage applications. Its unique features, such as low drive voltage and high power dissipation, provide significant advantages over similar models. With its wide range of applications, the STP180N4F6 is a reliable and efficient solution for professionals in the electronics industry.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Tradename
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

STP180N4F6 Documents

Download datasheets and manufacturer documentation for STP180N4F6

Ersa Product Change Notification (PDF)       Product Change Notification 2024-04-04 (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

Shopping Guide

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