STMicroelectronics_STP110N8F6

STMicroelectronics
STP110N8F6  
Single FETs, MOSFETs

STMicroelectronics
STP110N8F6
278-STP110N8F6
Ersa
STMicroelectronics-STP110N8F6-datasheets-6929777.pdf
MOSFET N-CH 80V 110A TO220
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    STP110N8F6 Description

    The STP110N8F6 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. Here's a brief description, features, and applications of the STP110N8F6:

    Description:

    The STP110N8F6 is a N-channel power MOSFET with a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 110A. It is designed for use in a wide range of power electronic applications where high efficiency, fast switching, and low on-state resistance are required.

    Features:

    1. High Power Rating: With a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 110A, the STP110N8F6 is suitable for high-power applications.
    2. Low On-State Resistance (RDS(on)): The MOSFET has a low on-state resistance, which minimizes power dissipation and improves efficiency in power conversion applications.
    3. Fast Switching Speed: The device offers fast switching capabilities, making it suitable for applications that require rapid transient response.
    4. Integrated Protection Features: The STP110N8F6 includes built-in protection features such as over-voltage, over-current, and over-temperature protection to ensure reliable operation and longevity.
    5. High-Temperature Operation: The MOSFET is designed for operation in high-temperature environments, with a maximum junction temperature (Tj) of 175°C.
    6. Robustness: The device is built to withstand high-energy transients and electrostatic discharge (ESD) events, making it suitable for use in harsh environments.

    Applications:

    1. Motor Control: The STP110N8F6 can be used in motor control applications, such as electric vehicles, industrial automation, and robotics, where high power and fast switching are required.
    2. Power Supplies: The MOSFET is suitable for use in power supply applications, including switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS), due to its high efficiency and fast switching capabilities.
    3. Solar Energy Systems: The STP110N8F6 can be used in solar energy systems for power conversion and management, taking advantage of its high power rating and robustness.
    4. Battery Management Systems: The MOSFET can be employed in battery management systems for electric vehicles and energy storage systems, where high current handling and fast switching are essential.
    5. Industrial Control Systems: The device can be used in various industrial control systems, such as variable frequency drives (VFDs) and servo drives, where high power and efficient power conversion are required.

    Please note that this information is based on the general specifications and features of the STP110N8F6. For detailed technical specifications, electrical characteristics, and application guidelines, it is essential to refer to the official datasheet provided by STMicroelectronics.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Length
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP110N8F6 Documents

    Download datasheets and manufacturer documentation for STP110N8F6

    Ersa STP110N8F6      
    Ersa EOL 09/Nov/2023      
    Ersa STP110N8F6      

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