STMicroelectronics
STLD200N4F6AG
Single FETs, MOSFETs
STLD200N4F6AG
278-STLD200N4F6AG
STMicroelectronics-STLD200N4F6AG-datasheets-6735344.pdf
MOSFET N-CH 40V 120A POWERFLAT
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STLD200N4F6AG Description
STLD200N4F6AG is a low-side MOSFET driver from STMicroelectronics. It is designed to drive N-channel MOSFETs in a wide range of applications, including motor control, power management, and automotive systems.
Description:
The STLD200N4F6AG is a monolithic integrated circuit in a compact DFN6 package. It features a high-voltage input with a logic-level output, allowing it to interface with low-voltage microcontrollers and drive high-voltage MOSFETs. The device also includes built-in protection features such as overcurrent protection, undervoltage lockout, and short-circuit protection.
Features:
- Low input voltage: The STLD200N4F6AG can be driven by low-voltage microcontrollers, making it suitable for battery-powered applications.
- High output voltage: The device can drive N-channel MOSFETs with voltage ratings up to 60V, making it suitable for a wide range of power management applications.
- Overcurrent protection: The STLD200N4F6AG includes overcurrent protection to prevent damage to the MOSFETs in the event of a short circuit or overload.
- Undervoltage lockout: The device includes an undervoltage lockout feature to prevent it from operating if the input voltage falls below a certain threshold.
- Short-circuit protection: The STLD200N4F6AG includes short-circuit protection to protect the MOSFETs from damage in the event of a short circuit.
Applications:
The STLD200N4F6AG is suitable for a wide range of applications, including:
- Motor control: The device can be used to drive the MOSFETs in brushless DC motor controllers, stepper motor drivers, and other motor control applications.
- Power management: The STLD200N4F6AG can be used to drive MOSFETs in power management applications such as battery chargers, power supplies, and energy harvesting systems.
- Automotive systems: The device is suitable for use in automotive systems such as electric power steering, fuel pumps, and air conditioning systems.
- Industrial control: The STLD200N4F6AG can be used to drive MOSFETs in industrial control applications such as conveyor systems, robotic arms, and manufacturing equipment.
Overall, the STLD200N4F6AG is a versatile MOSFET driver that offers a range of features and protections to ensure reliable operation in a variety of applications. Its compact size and low input voltage make it well-suited for space-constrained and battery-powered systems.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Minimum Gate Threshold Voltage (V)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STLD200N4F6AG Documents
Download datasheets and manufacturer documentation for STLD200N4F6AG
STLD200N4F6AG STLD200N4F6AG Related Parts
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