The STB18NM80 from STMicroelectronics is an N-channel 800V, 17A power MOSFET designed for high-efficiency switching applications. Part of the MDmesh™ series, it leverages advanced Metal Oxide (MOSFET) technology to deliver superior performance in high-voltage environments. With a low on-resistance (Rds On) of 295mΩ @ 8.5A, 10V, it minimizes conduction losses, making it ideal for power conversion systems. The device operates reliably up to 150°C (TJ) and features a robust ±25V gate-source voltage (Vgs) tolerance, ensuring durability in demanding conditions. Packaged in D2PAK (TO-263) with Tape & Reel (TR) mounting, it suits automated assembly processes.
The STB18NM80 stands out for its high-voltage capability, low conduction losses, and thermal resilience, making it a top choice for power electronics designers. Its MDmesh™ technology and optimized gate charge provide a competitive edge in efficiency-critical applications. Whether in industrial, renewable energy, or automotive systems, this MOSFET delivers reliability and performance, backed by STMicroelectronics' quality assurance.
Download datasheets and manufacturer documentation for STB18NM80