STMicroelectronics_STB18NM80

STMicroelectronics
STB18NM80  
Single FETs, MOSFETs

STMicroelectronics
STB18NM80
278-STB18NM80
Ersa
STMicroelectronics-STB18NM80-datasheets-7601564.pdf
MOSFET N-CH 800V 17A D2PAK
In Stock : 789

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STB18NM80 Description

STB18NM80 Description

The STB18NM80 from STMicroelectronics is an N-channel 800V, 17A power MOSFET designed for high-efficiency switching applications. Part of the MDmesh™ series, it leverages advanced Metal Oxide (MOSFET) technology to deliver superior performance in high-voltage environments. With a low on-resistance (Rds On) of 295mΩ @ 8.5A, 10V, it minimizes conduction losses, making it ideal for power conversion systems. The device operates reliably up to 150°C (TJ) and features a robust ±25V gate-source voltage (Vgs) tolerance, ensuring durability in demanding conditions. Packaged in D2PAK (TO-263) with Tape & Reel (TR) mounting, it suits automated assembly processes.

STB18NM80 Features

  • High Voltage Rating: 800V Vdss for industrial and automotive applications.
  • Low Gate Charge (Qg): 70nC @ 10V reduces switching losses, enhancing efficiency.
  • Optimized Rds On: 295mΩ @ 10V ensures minimal power dissipation.
  • High Power Handling: 190W (Tc) dissipation capability for robust performance.
  • Wide Vgs Range: ±25V tolerance for flexible drive compatibility.
  • Advanced MDmesh™ Technology: Improves switching speed and reduces EMI.
  • RoHS3 & REACH Compliant: Meets environmental and safety standards.

STB18NM80 Applications

  • Switch-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives: Industrial and automotive motor control systems.
  • Renewable Energy: Solar inverters and wind power converters.
  • Lighting: LED drivers and HID ballasts.
  • Industrial Automation: High-power switching in PLCs and UPS systems.

Conclusion of STB18NM80

The STB18NM80 stands out for its high-voltage capability, low conduction losses, and thermal resilience, making it a top choice for power electronics designers. Its MDmesh™ technology and optimized gate charge provide a competitive edge in efficiency-critical applications. Whether in industrial, renewable energy, or automotive systems, this MOSFET delivers reliability and performance, backed by STMicroelectronics' quality assurance.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Tradename
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

STB18NM80 Documents

Download datasheets and manufacturer documentation for STB18NM80

Ersa STx18NM80      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STB18NM80 View All Specifications      
Ersa STx18NM80      
Ersa D2PAK Lead Modification 04/Oct/2013      

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